An active‐matrix microLED display based on monolithic integration with IGZO backplane

Abstract

This paper presents a method of monolithically integrating gallium nitride micrometer‐scale light‐emitting diodes (microLEDs) with an indium gallium zinc oxide (IGZO) thin‐film transistor (TFT) backplane to produce an active‐matrix microdisplay. After discussion of the fabrication process, individual LEDs, TFTs, and the integrated system are characterized. Results demonstrate a 32 × 32 pixel, 78.4 PPI microdisplay with luminance exceeding 1500 nits. The dynamic set and hold behaviors of the active‐matrix pixel circuit are analyzed to verify the applicability of this technology for use in high and low refresh rate displays.