Active cycling reliability of power devices: Expectations and limitations

Kanert, Werner

doi:10.1016/j.microrel.2012.06.031

Cited by 25 publications

(10 citation statements)

References 13 publications

(15 reference statements)

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“…In particular, it is important to limit thermal gradients and consequently thermomechanical stresses due to multi-physics couplings [15,16]. The automotive market in Europe has largely adopted qualification according to the AEC-Q101 test flow for discrete components [17]. Such standard highlights that the lifetime has to be equal to 15 years when the power device is subjected to high-temperature variations.…”

Section: Introductionmentioning

confidence: 99%

The Importance of Interconnection Technologies’ Reliability of Power Electronic Packages

Jacques¹

2017

System Reliability

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This chapter deals with the reliability of die interconnections used in plastic discrete power packages, dedicated to on-board electronic systems used in a wide range of applications such as automotive industry. A complete reliability analysis of two bonding technologies-aluminum wire and ribbon bonding-is proposed. This study is particularly focused on interconnection technologies' aging, when the package is subjected to thermal cycling or power cycling with high-temperature swings. For thermal cycling, the experimental reliability test results highlight that wire bond package aging is about 2.5 faster than the ribbon bond package. For power cycling, this acceleration factor is about 1.5. In both cases and whatever the bonding technique, the failure mechanism of the package is of a fatigue-stress nature. Many failure analysis results show wire bond lift-off. The degradation of the ribbon bond is more difficult to observe. Thermo-mechanical simulations using finite elements show a high stress concentration in the heel area. For the wire-bonding technique, the wire is subjected to repeated flexing and pulling that lead to its lift off. The ribbon-bonding process shows a higher robustness, thanks to a higher contact surface on the die, the low-loop profile and the stiffness of the ribbon.

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Section: Introductionmentioning

confidence: 99%

The Importance of Interconnection Technologies’ Reliability of Power Electronic Packages

Jacques¹

2017

System Reliability

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“…The motivation for this particular case is its resemblance to real world application. Under these conditions, the dominant failure mechanism observed is bond wire lift-off [6], [7].…”

Section: Introductionmentioning

confidence: 99%

“…Often the change in temperature ΔT is used as the load and the model parameters are fitted to accelerated test data to take shape, environment, degree of damage, etc., into account (see [3], [6], [7], [11], [12]). …”

Section: Introductionmentioning

confidence: 99%

Dynamic Modeling Method of Electro-Thermo-Mechanical Degradation in IGBT Modules

Pedersen

2016

IEEE Trans. Power Electron.

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A degradation model investigating the electrothermo-mechanical fatigue, experienced by insulated gate bipolar transistors modules, is presented. To illustrate the concept, a specific case of power modules subjected to active power cycling which induce failure through bond wire lift-off is considered. Bond wire lift-off is believed to be due to thermally induced stress arising from a mismatch in the coefficients of thermal expansion between the wires and the given substrate. Overall, the theoretical evaluation is based on determining the thermo-mechanical stress around the bond wire/substrate interface through multiphysics-based models. The simulation detail and included equations are specified according to the region of interest and their complexity. In common, however, is the use of the finite element method combined with empirical equations. The final result is a numerical approach to evaluate the damage accumulated by a given load which may be used for prediction of lifetime or optimization of work points and module geometry.

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“…In a recent study [3], a comparison between ageing effects induced by different stressing experiments, namely, SC and unclamped inductive switching (UIS) tests, was performed for identical dissipated energies at each cycle, and it was surprisingly found that the timeto-failure was considerably test-dependent. In this paper, an attempt to provide an explanation to these findings is made through a wide experimental and simulation analysis focused on the degradation of the chip metallization [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

Riccio

d’Alessandro

Irace

et al. 2014

Microelectronics Reliability

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Active cycling reliability of power devices: Expectations and limitations

Cited by 25 publications

References 13 publications

The Importance of Interconnection Technologies’ Reliability of Power Electronic Packages

The Importance of Interconnection Technologies’ Reliability of Power Electronic Packages

Dynamic Modeling Method of Electro-Thermo-Mechanical Degradation in IGBT Modules

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

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