Activation energy determination from low-temperature CV dispersion [semiconductor devices]

Divakaruni, R.; Prabhakar, V.; Viswanathan, C.R.

doi:10.1109/16.297736

Cited by 13 publications

(7 citation statements)

References 5 publications

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“…Therefore, as experimentally observed 81 (e.g. page 544, see also [106,180,269,272] and references therein), from equation (4.29) the capacitance of the equivalent circuit becomes independent of frequency and approaches…”

Section: Figure 18mentioning

confidence: 59%

“…In addition, since at low temperature the carriers start to freeze-out (see section 4.3.3), the capacitance of the field-free region has been taken into account together with its resistance (e.g. [269,270]) in the comprehensive model for the small-signal ac impedance of a one-sided p + -n junction diode (SIJD) operated under reverse bias [271][272][273].…”

Section: Complex Junction Impedance Up To Cryogenic Temperaturesmentioning

confidence: 99%

“…when the carriers start to freeze-out (see section 4.3.3), can be approximated with that shown in figure 17(c), whose admittance is given by (e.g. see [269][270][271][272][273]):…”

Section: Complex Junction Impedance Up To Cryogenic Temperaturesmentioning

confidence: 99%

“…In the temperature range (indicated as saturation range in figure 18) within which the carrier concentration is almost constant, we can rewrite the conductance term of equation (4.29) as (e.g. see [272] and also (269)(270)(271)):…”

Section: Complex Junction Impedance Up To Cryogenic Temperaturesmentioning

confidence: 99%

“…In the freeze-out range of temperature, the free-carrier concentration depends on both the compensation level and the energy level of the dopant atoms. Thus, it is possible to determine the energy level of the dopant atoms by means of the measurement of ω p (T ) as a function of T ( [269,270] and references therein). It has to be added that the depth of the depleted layer (X) may depend on the temperature because (a) fewer ionized dopants are available to create the space-charge region and (b) the carrier concentrations in the p + -and n-region exhibit different freeze-out ranges of temperature due to the large difference between their dopant concentrations (see section 4.3.3 and references therein).…”

Section: Figure 18mentioning

confidence: 99%

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Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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Section: Figure 18mentioning

confidence: 59%

Section: Complex Junction Impedance Up To Cryogenic Temperaturesmentioning

confidence: 99%

“…when the carriers start to freeze-out (see section 4.3.3), can be approximated with that shown in figure 17(c), whose admittance is given by (e.g. see [269][270][271][272][273]):…”

Section: Complex Junction Impedance Up To Cryogenic Temperaturesmentioning

confidence: 99%