Activation and mechanochemical breaking of C–C bonds initiate wear of diamond (110) surfaces in contact with silica

Peguiron, Anke; Moras, Gianpietro; Walter, Michael; Uetsuka, Hiroshi; Pastewka, Lars; Moseler, Michael

doi:10.1016/j.carbon.2015.10.098

Cited by 62 publications

(53 citation statements)

References 51 publications

(65 reference statements)

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“…The polishing technique and proposed mechanisms are well described elsewhere [22,23,27]. Prior to polishing, the felt pad was roughened with a chuck embedded with diamond grit for 30 min to promote the surface texture optimally required for polishing [28].…”

Section: Experimental Methodsmentioning

confidence: 99%

Superconductivity in planarised nanocrystalline diamond films

Klemencic

Mandal

Werrell

et al. 2017

Science and Technology of Advanced Materials

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Section: Experimental Methodsmentioning

confidence: 99%

Superconductivity in planarised nanocrystalline diamond films

Klemencic

Mandal

Werrell

et al. 2017

Science and Technology of Advanced Materials

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“…Density function theory studies performed Peguiron et al [23] have demonstrated that the polar silica molecule is able to break down the diamond surface due to weakening of C-C bonds between the terminating zigzag carbon chains.…”

Section: Resultsmentioning

confidence: 99%

“…It is therefore unlikely that the difference in removal rate between the slurries can be attributed to a difference in the amount of oxygenated carbon present at the NCD surface. In addition, little change in the graphitic bonded carbon peak occurs between the samples, suggesting that unlike traditional scaife based polishing, phase conversion to less dense forms of carbon is not responsible for the polishing observed [23]. With little change in the species terminating the surface visible, Table 2 expresses the ratio of the area of the O1s peak with respect to the C1s peak.…”

Section: Resultsmentioning

confidence: 99%

“…Doing away with these issues, the recent adaption of the technique of chemical mechanical polishing (CMP) from the IC-industry to diamond has demonstrated the polishing of highly bowed NCD films to roughness values below 2 nm RMS over areas of 25 µm 2 , without the risk of sub-surface damage or significant polishing introduced contamination [21]. Further developments of the technique have demonstrated the role of the abrasive size in polishing, highlighting the mechanical nature of the technique, while density function theory studies have focused on the dynamics of surface degradation by silica, demonstrating the chemical aspects of polishing [22,23]. In this work the addition of redox agents to the slurry is then explored in an attempt to improve the removal rate, and elucidate on the chemical nature of the polishing mechanism.…”

Section: Introductionmentioning

confidence: 99%

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Redox agent enhanced chemical mechanical polishing of thin film diamond

Mandal

Thomas

Ginés

et al. 2018

Carbon

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The chemical nature of the chemical mechanical polishing of diamond has been examined by adding various redox agents to the alkaline SF1 polishing slurry. Three oxidizing agents namely, hydrogen peroxide, potassium permanganate and ferric nitrate, and two reducing agents, oxalic acid and sodium thiosulfate, were added to the SF1 slurry. Oxalic acid produced the fastest polishing rate while hydrogen peroxide had very little effect on polishing, probably due to its volatile nature. X-ray photoelectron spectroscopy (XPS) reveals little difference in the surface oxygen content on the polished samples using various slurries. This suggests that the addition of redox agents do not increase the density of oxygen containing species on the surface but accelerates the process of attachment and removal of Si or O atoms within the slurry particles to the diamond surface

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“…Conversely, we are unable to find detailed reports of wear resulting from etching oxides and metals, or the practical implications for tomography measurements made using at least an order of magnitude lower applied force. Furthermore, it is significant that oxygen can induce amorphization of diamond, leading to wear (Peguiron et al, 2016). Oxides necessarily contain oxygen, and many materials will at least contain some trace oxygen, so this wear process might be typical of tomography.…”

Section: Introductionmentioning

confidence: 99%

Improving the Consistency of Nanoscale Etching for Atomic Force Microscopy Tomography Applications

Buckwell

Hudziak

et al. 2019

Front. Mater.

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The atomic force microscope (AFM) empowers research into nanoscale structural and functional material properties. Recently, the scope of application has broadened with the arrival of conductance tomography, a technique for mapping current in three-dimensions in electronic devices by gradually removing sample material with the scanning probe. This technique has been valuable in studying resistance switching memories and solar cells, although its broader use has been hindered by a lack of understanding of its reliability and practicality. Implementation can be preclusive, owing to difficulties in characterizing tip-sample interactions and accounting for probe degradation, both of which are crucial factors in process efficacy. This work follows the existing conductance tomography literature, presenting an insight into the repeatability and reliability of the material removal processes. The consistency of processes on a hard oxide and a softer metal are investigated, to understand the critical differences in etching behavior that might affect tomography measurements on heterostructures. Individual probe behavior stabilizes following a wearing-in stage and etching processes are consistent between probes, in particular on oxide. However, process inconsistency increases with applied force on metal. The effects of scan angle, tip speed and feedback gain are therefore explored and their tuning found to improve the spatial consistency of material removal. With these findings, we aim to present a critical study of the implementation of tomography with the AFM in order to contribute to its methodological development.

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Activation and mechanochemical breaking of C–C bonds initiate wear of diamond (110) surfaces in contact with silica

Cited by 62 publications

References 51 publications

Superconductivity in planarised nanocrystalline diamond films

Superconductivity in planarised nanocrystalline diamond films

Redox agent enhanced chemical mechanical polishing of thin film diamond

Improving the Consistency of Nanoscale Etching for Atomic Force Microscopy Tomography Applications

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