2003
DOI: 10.1103/physrevb.67.121309
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Acoustic plasmons and indirect intersubband excitations in tunneling-coupledGaAsAlx

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Cited by 21 publications
(10 citation statements)
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“…With decreasing barrier height and thickness the tunneling effects become more appreciable and the plasmon gap grows to become more significant. These results are consistent with the long wavelength behavior of plasmons in double quantum well systems [4][5][6][7]. As we are interested in the effects of exchange-correlation potential on the plasmon dispersions we concentrate on the large wave vector region.…”
Section: (B) For 10supporting
confidence: 85%
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“…With decreasing barrier height and thickness the tunneling effects become more appreciable and the plasmon gap grows to become more significant. These results are consistent with the long wavelength behavior of plasmons in double quantum well systems [4][5][6][7]. As we are interested in the effects of exchange-correlation potential on the plasmon dispersions we concentrate on the large wave vector region.…”
Section: (B) For 10supporting
confidence: 85%
“…We follow the analyses of previous works [3,[5][6][7] to calculate the plasmon dispersions by solving for the zeros of the dielectric matrix ε(q, ω), with and without the exchange-correlation effects by including and omitting V xc , respectively. Our numerical results are presented in the next section.…”
Section: Original Papermentioning
confidence: 99%
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“…Theoretical investigations over the past years generally predict that AP could exist under appropriate conditions in doped semiconductors and in some transition-metal compounds, while their experimental manifestations have been taken up the challenges. [39][40][41][42][43] Some efforts show that the ideal solid state devices to explore the APs could be the spatially separated multi-component semiconductor systems. Owing to sever suppression of single-particle excitations (SPEs), the plasmon modes in onedimensional electron-hole(e-h) plasma might be completely free of damping over wide ranges of different geometrical and physical parameters.…”
Section: Introductionmentioning
confidence: 99%
“…Double quantum wells (DQWs) play an important role in designing and fabricating optoelectronic devices, e.g., near‐infrared photodetectors, full‐visible spectrum LEDs, and quantum cascade lasers 1, 2. Experiments related to the optical and electronic properties of DQWs 3–5 stimulated the development of theories. In early years, Kamizato and Matsuura 6 and Zhao et al 7 calculated the binding energies of ground‐state excitons in GaAs/AlGaAs symmetric DQWs and obtained the dependence of binding energies on the well width.…”
Section: Introductionmentioning
confidence: 99%