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We have realized a micromechanical cantilever magnetometer with an integrated two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure grown by molecular-beam epitaxy (MBE). The cantilever was defined by lithography and wet-etched selectively to a MBE-grown stop layer. We reach a sensitivity of 10−13 J/T, which enables us to study the de Haas–van Alphen effect in a 2DES of only 0.04 cm2 area. We demonstrate that, at low temperature, the oscillation amplitude at even filling factors is enhanced by a factor of up to 1.8 with respect to the single-particle value.

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We report the investigation of electronic excitations in InGaAs self-assembled quantum dots using resonant inelastic light scattering. The dots can be charged via a gate by N=1, em leader,6 electrons. We observe excitations, which are identified as transitions of electrons, predominantly from the s to the p shell (s-p transitions) of the quasiatoms. We find that the s-p transition energy decreases and the observed band broadens, when the p shell is filled with 1 to 4 electrons. By a theoretical model, which takes into account the full Coulomb interaction in the few-electron artificial atom, we can confirm the experimental results to be an effect of the Coulomb interaction in the quantum dot.

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