Achieving optical gain in waveguide-confined nanocluster-sensitized erbium by pulsed excitation

Miller, Gregory H.; Briggs, Ryan M.; Atwater, Harry A.

doi:10.1063/1.3465120

Cited by 20 publications

(13 citation statements)

References 23 publications

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“…In the previously mentioned simulation by Miller et al [26], a 10 nm Er:Si-ncs layer (in SiO 2 ) slot waveguide sandwiched between two Si layers is proposed to obtain modal gain under a pulsed injection scheme. The study shows that modal gain can be enhanced from <1 dB/cm to 2-3 dB/cm when the thickness of active layer is increased from 10 nm to 50 nm.…”

Section: Trade-off Between Sample Thickness and Si Excess To Optimizementioning

confidence: 99%

“…However, no net optical gain has yet been reported for electrically-driven SiO x :Er devices, and the state-of-the-art highest fraction of electrically excited Er 3+ ions is 20% [25]. Nevertheless, two recent simulation works showed that (i) it is theoretically possible to achieve modal gain via pulsed electrical excitation of waveguide-confined devices [26], and (ii) light can be efficiently coupled from electrically-pumped SiO x :Er into silicon waveguides [27]. Such results are promising for future all-silicon optical-circuitry and highlight the need to better understand the physics of carrier transport and erbium excitation in fabricated devices.…”

Section: Introductionmentioning

confidence: 99%

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Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Cueff¹,

Labbé²,

Jambois³

et al. 2012

Opt. Express

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Abstract:We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiO x ) layers. The effects of both the active layer thickness and the Siexcess content on the electrical excitation of erbium are studied. We demonstrate that when the thickness is decreased from a few hundred to tens of nanometers the conductivity is greatly enhanced. Carrier transport is well described in all cases by a Poole-Frenkel mechanism, while the thickness-dependent current density suggests an evolution of both density and distribution of trapping states induced by Si nanoinclusions. We ascribe this observation to stress-induced effects prevailing in thin films, which inhibit the agglomeration of Si atoms, resulting in a high density of sub-nm Si inclusions that induce traps much shallower than those generated by Si nanoclusters (Si-ncs) formed in thicker films. There is no direct correlation between high conductivity and optimized EL intensity at 1.5 µm. Our results suggest that the main excitation mechanism governing the EL signal is impact excitation, which gradually becomes more efficient as film thickness increases, thanks to the increased segregation of Si-ncs, which in turn allows more efficient injection of hot electrons into the oxide matrix. Optimization of the EL signal is thus found to be a compromise between conductivity and both number and degree of segregation of Si-ncs, all of which are governed by a combination of excess Si content and sample thickness. This material study has strong implications for many electricallydriven devices using Si-ncs or Si-excess mediated EL. USSR 5, 685-687 (1938). ©2012 Optical Society of America

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Section: Trade-off Between Sample Thickness and Si Excess To Optimizementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Cueff¹,

Labbé²,

Jambois³

et al. 2012

Opt. Express

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“…11 Miller et al calculated a modal gain of 2 dB/cm in a slot waveguide confined Si-NC:Er under the pulsed excitation which mitigates excited carrier absorption. 12 In this work, we will evaluate erbium excitation mechanisms and emission in Si-NC:Er LED under electrical pumping using both direct current and bipolar pulsed excitation schemes, i.e., when the polarity of the applied voltage pulse is periodically changed.…”

Section: Introductionmentioning

confidence: 99%

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Anopchenko

Tengattini

Marconi

et al. 2012

Journal of Applied Physics

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High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms under direct current (DC) and bipolar pulsed electrical injection were studied in a broad range of excitation voltages and frequencies. Under DC excitation, Fowler-Nordheim tunneling of electrons is mediated by Er-related trap states and electroluminescence originates from impact excitation of Er ions. When the bipolar pulsed electrical injection is used, the electron transport and Er excitation mechanism change. Sequential injection of electrons and holes into silicon nanoclusters takes place and nonradiative energy transfer to Er ions is observed. This mechanism occurs in a range of lower driving voltages than those observed in DC and injection frequencies higher than the Er emission rate. V C 2012 American Institute of Physics. [http://dx

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“…Also, much attention has been paid to carrier absorption (CA) losses at 1.53 μm in Si-nanocrystal (Si-ncs) waveguides by means of optical pumping [12], determining an accurate characterization of the optical losses even in slot waveguides [13]. Still, the possible performance of this geometry in an electrical pump & probe scenario have only been modeled [14], but never studied experimentally.…”

Section: Introductionmentioning

confidence: 99%

Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides

Ramírez¹,

Berencén²,

Lupi³

et al. 2012

Opt. Express

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Electrically driven Er3+ doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er 3+ doped active layers were fabricated in the slot region: a pure SiO 2 and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er 3+ ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, "Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip," Nanotechnology (to be published). ©2012 Optical Society of America

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Achieving optical gain in waveguide-confined nanocluster-sensitized erbium by pulsed excitation

Cited by 20 publications

References 23 publications

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides

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