Electrical pump &amp; probe and injected carrier losses quantification in Er doped Si slot waveguides

Ramírez, J. M.; Berencén, Yonder; Lupi, Federico Ferrarese; Navarro-Urriós, D.; Anopchenko, Aleksei; Tengattini, A.; Prtljaga, N.; Pavesi, L.; Rivallin, P.; Fédéli, Jean-Marc; Garrido, B.

doi:10.1364/oe.20.028808

Cited by 4 publications

(2 citation statements)

References 29 publications

(33 reference statements)

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“…On the other side, the inclusion of rare earth ions as luminescent centers, and Er 3+ ions in particular, has demonstrated to be promising for the development of CMOS compatible light emitting sources at 1.5 µm . Near infrared light emitting devices have been previously reported using Er implanted PN junctions , metal‐oxide‐semiconductor devices or even slot waveguide geometries .…”

Section: Introductionmentioning

confidence: 99%

Charge trapping and physical parameters of Er³⁺ doped light‐emitting field‐effect transistors

Ramírez

Berencén

Garrido

2014

Physica Status Solidi (a)

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Phone: þ34 934039176, Fax: (þ34) 934 021 148The electrical properties of light-emitting field-effect transistors with Er 3þ doped gate oxides formed either by a Si-rich oxide or by a SiO 2 are studied. Measured output and transfer characteristics in combination with C-V curves allowed for the main device parameters determination (flat-band voltage, Debye length, or low-field mobility). Decreased threshold voltage, interface charge trapping and low-field mobility enhancement in devices containing Si-rich oxides respect to those with Er 3þ doped SiO 2 gate are found. In addition, the implantation of Er 3þ ions in the gate oxide produced significant low-field mobility reduction in the transistor inversion layer.Typical polarization scheme and device cross section of a lightemitting field-effect transistor (left). Erbium electroluminescence spectrum collected from the top of the polysilicon gate (right).

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Section: Introductionmentioning

confidence: 99%

Charge trapping and physical parameters of Er³⁺ doped light‐emitting field‐effect transistors

Ramírez

Berencén

Garrido

2014

Physica Status Solidi (a)

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“…37. Simulaciones 2D-FDTD con resolución 30nm de un DBR con Λ=229nm, = 0.53, ℎ ℎ = 70nm y N = 20 para la obtención de (a) la reflectividad y (b) transmitancia en función de la variación del espesor de las capas de óxido y .…”

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Dispositivos emisores de luz para transmisión óptica de alta velocidad

Luzuriaga¹,

Alejandro²

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Silicon photonics is one of the technologies that has raised a higher interest during the last two decades. Therefore, the development of photonic integrated circuits has had an important presence in the research of new components and devices for the improvement of performance in optical communication systems. One of the main advantages of silicon photonics is its compatibility with CMOS electronic technology, which makes it a promising platform for mass production at low cost. The reduced size of photonic structures and the low propagation losses achieved in nanometric photonic waveguides has allowed the development of devices with a high density of integration. Similarly, high-speed optical modulators and highly efficient photodetectors have been demonstrated. However, the development of the light source or laser, an indispensable element in any optical communication system, is not possible due to the indirect bandgap of silicon. Therefore, other direct bandgap materials have been studied and proposed to integrate a laser on the silicon chip with emission in the O and C bands. The main challenge lies in reaching the coherent stimulated emission regime by means of an electric pump and in an efficient way. For this, several integration schemes have been proposed. Monolithic integration deals with the fabrication of the laser directly on the chip. On the other hand, hybrid integration consists in the fabrication of the laser separately to later be integrated into the chip. The best results have been achieved by means of this approach. Therefore, the main goal of the thesis has been the development of an external cavity laser by means of a hybrid integration scheme and with operation in the O-band. The different basic building blocks have been analyzed, designed, fabricated and experimentally demonstrated. Finally, the integration with the active material has been carried out, successfully demonstrating stimulated emission and single-mode operation. In addition, the thesis has also addressed the coupling to slow waveguide guidance structures, which have been proposed in monolithic integration schemes.

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Optical gain based on NaYF4: Er3+, Yb3+ nanoparticles-doped polymer waveguide under convenient LED pumping

Zhou

Xue

Zhang

et al. 2021

Applied Physics Letters

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The relative optical gains at three near infrared wavelengths (1550 nm, 1064 nm, and 980 nm) were achieved in NaYF4: Er3+, Yb3+ nanoparticle-doped SU-8 waveguides when using two low-cost light-emitting diodes (LEDs) instead of traditional 980 nm semiconductor laser as pump source. The polymer waveguides were fabricated by one-step photolithography process. The fluorescence bands around 1550 nm and 1000 nm wavelengths due to the 4I13/2 → 4I15/2 transition of Er3+ ions and 2F5/2 → 2F7/2 transition of Yb3+ ions were observed under the excitation of 405 nm and 520 nm LEDs. By using the vertical top pumping mode of LEDs, the relative gains of 4.2 dB, 1.7 dB, and 2.1 dB at 1550 nm, 1064 nm, and 980 nm wavelengths were achieved, respectively, on a 10-mm-long waveguide.

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Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides

Cited by 4 publications

References 29 publications

Charge trapping and physical parameters of Er³⁺ doped light‐emitting field‐effect transistors

Charge trapping and physical parameters of Er³⁺ doped light‐emitting field‐effect transistors

Dispositivos emisores de luz para transmisión óptica de alta velocidad

Optical gain based on NaYF4: Er3+, Yb3+ nanoparticles-doped polymer waveguide under convenient LED pumping

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Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides

Cited by 4 publications

References 29 publications

Charge trapping and physical parameters of Er3+ doped light‐emitting field‐effect transistors

Charge trapping and physical parameters of Er3+ doped light‐emitting field‐effect transistors

Dispositivos emisores de luz para transmisión óptica de alta velocidad

Optical gain based on NaYF4: Er3+, Yb3+ nanoparticles-doped polymer waveguide under convenient LED pumping

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Charge trapping and physical parameters of Er³⁺ doped light‐emitting field‐effect transistors

Charge trapping and physical parameters of Er³⁺ doped light‐emitting field‐effect transistors