2020
DOI: 10.1039/d0tc04617e
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Achieving high energy efficiency and energy density in PbHfO3-based antiferroelectric ceramics

Abstract: Antiferroelectric materials with higher electric field, reduced energy dissipation and lower remanent polarization generally display excellent energy storage performance. In this work, Pb0.98La0.02(Hf1-xSnx)0.995O3 lead-based antiferroelectric ceramics were synthesized by a...

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Cited by 49 publications
(39 citation statements)
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“…Furthermore, we also demonstrated reliable polarization and energy performance under strong strain as the PHO films were epitaxially grown on the flexible mica substrates. Compared with existing PHO research, our epitaxial PHO films show the best energy storage performance at high temperature and under strong strain, [16,17,[21][22][23] greatly expanding their application ranges, for example, for flexible electronics.…”
Section: Introductionmentioning
confidence: 90%
“…Furthermore, we also demonstrated reliable polarization and energy performance under strong strain as the PHO films were epitaxially grown on the flexible mica substrates. Compared with existing PHO research, our epitaxial PHO films show the best energy storage performance at high temperature and under strong strain, [16,17,[21][22][23] greatly expanding their application ranges, for example, for flexible electronics.…”
Section: Introductionmentioning
confidence: 90%
“…130 , 131 Additionally, some new AFEs have also been identified based on PbHfO 3 , Pb(Lu 0.5 Nb 0.5 )O 3 , Pb(Yb 0.5 Nb 0.5 )O 3 , and Pb(Tm 0.5 Nb 0.5 )O 3 . 132 138 …”
Section: State-of-the-art In Electroceramics For Energy Storagementioning
confidence: 99%
“…Nevertheless, the energy storage properties of PHO-based ceramics have rarely been reported. In 2020, Chao et al [176] prepared Pb 0.98 La 0.02 (Hf x Sn 1−x ) 0.995 O 3 antiferroelectric ceramics, and achieved a good energy storage performance: W rec and  are of 7.63 J/cm 3 and 94% for x = 0.45 composition, respectively. Recently, Huang et al [177] reported pure PHO ceramic films by sol-gel method at 650 ℃ annealing temperature, and achieved a W rec of 24.9 J/cm 3 .…”
Section: Pb-based Antiferroelectric Ceramicsmentioning
confidence: 99%