Accurate X-ray determination of the lattice parameters and the thermal expansion coefficients of VO<sub>2</sub>near the transition temperature

Kucharczyk, D.; Niklewski, T.

doi:10.1107/s0021889879012711

Cited by 175 publications

(126 citation statements)

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“…25 These quantities are related through the Clausius-Clapeyron equation dT/dP = TΔV/L, where ΔV = VR-VM1 is the molar volume change and L is the molar enthalpy change (latent heat) going from M1 to R. The positive slope (dT/dP) is an indication of volume expansion going from M1 to R, consistent with reports. 8,25 Using the average dT/dP = 1.4 o C/GPa and the ambient ΔV/V = 0.044%, an average L is calculated to be ~1.9 kJ/mol, compared to averaged value of L = 3.1~4.3 kJ/mol in literature. 25 By considering the P dependencies of dT/dP and ΔV, it is possible to go beyond these averaged values and obtain values of L under pressure.…”

supporting

confidence: 86%

“…8,25 Using the average dT/dP = 1.4 o C/GPa and the ambient ΔV/V = 0.044%, an average L is calculated to be ~1.9 kJ/mol, compared to averaged value of L = 3.1~4.3 kJ/mol in literature. 25 By considering the P dependencies of dT/dP and ΔV, it is possible to go beyond these averaged values and obtain values of L under pressure. The molar volume, V, has been experimentally measured as a function of P at 25 o C (M1 phase) and 110 o C (R phase) in Ref., 9 as well as a function of T (both M1 and R phases) at ambient pressure in Ref., 25 and these dependencies all appear linear within the range of pressure and temperature variations.…”

mentioning

confidence: 92%

“…25 By considering the P dependencies of dT/dP and ΔV, it is possible to go beyond these averaged values and obtain values of L under pressure. The molar volume, V, has been experimentally measured as a function of P at 25 o C (M1 phase) and 110 o C (R phase) in Ref., 9 as well as a function of T (both M1 and R phases) at ambient pressure in Ref., 25 and these dependencies all appear linear within the range of pressure and temperature variations. Assuming that both VM1 and VR depend on P and T following the linear functional form of P+ T+ , by fitting to the experimental data in Refs., 9,25 one can obtain M1, M1, M1 and R, R, R. Consequently, the volume change ΔV = VR-VM1 is obtained as a function of T and P, and its values along the M1-R phase boundary is determined.…”

mentioning

confidence: 99%

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Pressure–Temperature Phase Diagram of Vanadium Dioxide

Chen¹,

Zhang²,

et al. 2017

Nano Lett.

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equally to this work. AbstractThe complexity of strongly correlated electron physics in vanadium dioxide is exemplified as its rich phase diagrams of all kinds, which in turn shed light on the mechanisms behind its various phase transitions. In this work, we map out the hydrostatic pressuretemperature phase diagram of vanadium dioxide nanobeams by independently varying pressure and temperature with a diamond anvil cell. In addition to the well-known insulating M1 (monoclinic) and metallic R (tetragonal) phases, the diagram identifies the existence at high pressures of the insulating M1' (monoclinic, more conductive than M1) phase, and two metallic phases of X (monoclinic) and O (orthorhombic, at high temperature only). Systematic optical and electrical measurements combined with density functional calculations allow us to delineate their phase boundaries as well as reveal some basic features of the transitions.

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confidence: 86%

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confidence: 92%

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confidence: 99%

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Pressure–Temperature Phase Diagram of Vanadium Dioxide

Chen¹,

Zhang²,

et al. 2017

Nano Lett.

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“…4A) reveals two time constants: first, an ultrafast dynamic (occurring within 10 ps), which is attributed to vanadium atom motion within the unit cell; second, a slower dynamic on the order of ∼ 170 ps, which is attributed to long-range shear rearrangement essential in the rutile phase transformation process. These two distinct processes (30,33) can be described by an energy landscape (34) as illustrated by Cavalleri (34). To ensure that the dynamic change of the PINEM intensity, as retrieved from the time-resolved PINEM measurements in Fig.…”

Section: Resultsmentioning

confidence: 99%

Photon gating in four-dimensional ultrafast electron microscopy

Hassan

Liu

Baskin

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

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Ultrafast electron microscopy (UEM) is a pivotal tool for imaging of nanoscale structural dynamics with subparticle resolution on the time scale of atomic motion. Photon-induced near-field electron microscopy (PINEM), a key UEM technique, involves the detection of electrons that have gained energy from a femtosecond optical pulse via photon-electron coupling on nanostructures. PINEM has been applied in various fields of study, from materials science to biological imaging, exploiting the unique spatial, energy, and temporal characteristics of the PINEM electrons gained by interaction with a "single" light pulse. The further potential of photon-gated PINEM electrons in probing ultrafast dynamics of matter and the optical gating of electrons by invoking a "second" optical pulse has previously been proposed and examined theoretically in our group.Here, we experimentally demonstrate this photon-gating technique, and, through diffraction, visualize the phase transition dynamics in vanadium dioxide nanoparticles. With optical gating of PINEM electrons, imaging temporal resolution was improved by a factor of 3 or better, being limited only by the optical pulse widths. This work enables the combination of the high spatial resolution of electron microscopy and the ultrafast temporal response of the optical pulses, which provides a promising approach to attain the resolution of few femtoseconds and attoseconds in UEM.photon-induced near-field electron microscopy | attosecond electron microscopy | optical-gated electron pulse | time-resolved PINEM | photon-electron gating I n ultrafast electron microscopy (UEM) (1-3), electrons generated by photoemission at the cathode of a transmission electron microscope are accelerated down the microscope column to probe the dynamic evolution of a specimen initiated by an ultrafast light pulse. The use of femtosecond lasers to generate the electron probe and excite the specimen has made it possible to achieve temporal resolution on the femtosecond time scale, as determined by the cross-correlation of the optical and electron pulses. One important method in the UEM repertoire is photon-induced near-field electron microscopy (PINEM) (4, 5), in which the dynamic response detected by the electron probe is the pump-induced charge density redistribution in nanoscale specimens (6).Photon-electron coupling is the basic building block of PINEM, which takes place in the presence of nanostructures when the energy-momentum conservation condition is satisfied (4, 5). This coupling leads to inelastic gain/loss of photon quanta by electrons in the electron packet, which can be resolved in the electron energy spectrum (5,7,8). This spectrum consists of discrete peaks, spectrally separated by multiples of the photon energy (nZω), on the higher and lower energy sides of the zero loss peak (ZLP) (4) (Fig. 1). The development of PINEM enables the visualization of the spatiotemporal dielectric response of nanostructures (9), visualization of plasmonic fields (4, 5) and their spatial interferences (10), imag...

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“…Este efecto es de gran interés para la detección de los cambios de temperatura bolométrica con aplicaciones en visión por infi-arrojo y como termistores. Algunos autores han registrado que el cambio de fase que acompaña a este efecto produce una pequeña dilatación cercana al 0.044% [32] y una redución de la resistividad inducida por deformación [33], lo que implica que las películas de VOj podrían usarse como "sensor de tensiones". En este sentido, se cree que con una comprensión más profimda de las [32] and a large strain induced resistivity reduction [33], implying that VO^ thin film can be used as stress sensor.…”

Section: Potenciales Aplicaciones En Arquitecturaunclassified

Fundamentos de la aplicación de películas delgadas de dióxido de vanadio como posibles componentes de ventanas inteligentes

Wu¹,

Nashiyama²,

Naramoto³

1999

Mater. construcc.

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Fundamentos de la aplicación de películas delgadas de dióxido de vanadio como posibles componentes de ventanas inteligentes Fundamentals of vanadium dioxide thin films as possible components of intelligent windows SUMMARYIn this paper, the research on the vanadium dioxide thin film, which can be used as intelligent windows, is reviewed, including the basic properties of VO.,, energy band structure, model of electronic energy and the origin of metal-to-insulator transition (MIT). Finally, the problems existing in the research and the possibility of application for FO, as an intelligent thermochromic window are briefly discussed. INTRODUCCIÓNDesde la publicación pionera del trabajo experimental de Morín en 1959 [1], quien descubrió el fenómeno de la transición metal -aislador (MIT en la literatura en inglés) y los cambios bruscos de las propiedades ópticas y eléctricas a que da lugar en el dióxido de vanadio (VO2), este material ha sido estudiado con gran intensidad por numerosos investigadores, no solamente por el interés en explorar el mecanismo de dicha L INTRODUCTIONSince the pioneering work of Morín as early as 1959 [IJ, who discovered metal-to-insulator transition (MIT)

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Accurate X-ray determination of the lattice parameters and the thermal expansion coefficients of VO₂near the transition temperature

Cited by 175 publications

References 11 publications

Pressure–Temperature Phase Diagram of Vanadium Dioxide

Pressure–Temperature Phase Diagram of Vanadium Dioxide

Photon gating in four-dimensional ultrafast electron microscopy

Fundamentos de la aplicación de películas delgadas de dióxido de vanadio como posibles componentes de ventanas inteligentes

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Accurate X-ray determination of the lattice parameters and the thermal expansion coefficients of VO2near the transition temperature

Cited by 175 publications

References 11 publications

Pressure–Temperature Phase Diagram of Vanadium Dioxide

Pressure–Temperature Phase Diagram of Vanadium Dioxide

Photon gating in four-dimensional ultrafast electron microscopy

Fundamentos de la aplicación de películas delgadas de dióxido de vanadio como posibles componentes de ventanas inteligentes

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Accurate X-ray determination of the lattice parameters and the thermal expansion coefficients of VO₂near the transition temperature