Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks

Physically unclonable function using CMOS breakdown position

“…It can be clearly observed that the Weibull-slope (β) increases with elevated stress voltages. We attribute the variations on slopes to the competition of breakdown in a bilayer dielectric stack, consisting of SiO 2 and high-k [20]- [21]. Note that the traditional Weibull fitting is not applicable with this varying slopes, and the limited number of samples is not sufficient to characterize the bimodal distribution.…”

Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2Thin Films on Ge Substrates: Reliability

“…This behavior further confirms that the addition of Zr in HfO 2 improves the quality of the high-k dielectrics by reducing the number of pre-existing defects. 33 In our study, by (Table I). Considering the thickness of the high-k layer is ∼3.5 nm, such a low Weibull slope suggests that defect generation and breakdown of the thin interfacial layer mainly determines the high-k/IL stack breakdown with little impact from the high-k layer.…”

Investigation of dependence between time-zero and time-dependent variability in high-κ NMOS transistors

“…The time dependent dielectric oxide breakdown (TDDB) in HKMG transistors is characterized by short breakdown times as well as shallow Weibull slopes [17]. We have incorporated a 3D percolation model in our BTI model in order to capture the TDDB effect considering different defect generation rates in the IL and the HK layers.…”

“…We have incorporated a 3D percolation model in our BTI model in order to capture the TDDB effect considering different defect generation rates in the IL and the HK layers. Although, the high-κ materials demonstrate lower tunneling current and better transistor performance, a thin interfacial layer (IL) of SiO 2 is needed to passivate the Si-dielectric interface [17]. Since the defect generation rate in SiO 2 at operating voltage is lesser than the high-κ layer [13], the presence of this IL layer improves both TDDB and PBTI and also increases the carrier mobility [13,17].…”

“…However, in scaled technologies, the formation of 3D conduction paths can no longer be ignored since the oxide layers are comprised of very few layers of defects. Subsequently, 3D cell-based percolation model has been proposed and implemented in different literature [17,26]. In our statistical model, we have incorporated this model in-order to capture the TDDB effect.…”