2008
DOI: 10.1039/b715148a
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Accurate determinations of Ge atom fractions in SiGe semiconductor chips using high performance ICP-OES

Abstract: The Ge atom fractions in SiGe chips with nominal values in the range 3.5% to 14% were accurately determined using high performance inductively coupled plasma optical emission spectroscopy (HP-ICP-OES). For each chip, Si and Ge were determined in separate HP-ICP-OES experiments, and the Ge atom fraction was calculated from the data. This approach eliminated the need to measure the mass of the chip, thereby avoiding a potentially significant source of uncertainty. Digestion of the chips occurred in the presence … Show more

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Cited by 3 publications
(4 citation statements)
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References 20 publications
(29 reference statements)
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“…HP-ICP-OES is used routinely for the certification of elemental mass fraction in the 3100 series of elemental standard solution SRMs 22,25 and has also been used in other NIST measurements. [26][27][28][29] involving ICP-OES procedures that are similar to the highperformance protocol have been reported by other laboratories. [30][31][32][33][34] It is important to emphasize that for the certification of Be mass fraction in SRM 1877, HP-ICP-OES was modified somewhat from the way it has been described previously.…”
mentioning
confidence: 80%
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“…HP-ICP-OES is used routinely for the certification of elemental mass fraction in the 3100 series of elemental standard solution SRMs 22,25 and has also been used in other NIST measurements. [26][27][28][29] involving ICP-OES procedures that are similar to the highperformance protocol have been reported by other laboratories. [30][31][32][33][34] It is important to emphasize that for the certification of Be mass fraction in SRM 1877, HP-ICP-OES was modified somewhat from the way it has been described previously.…”
mentioning
confidence: 80%
“…Relative expanded uncertainties, expressed as 95% confidence intervals, are typically on the order of 0.1%. HP-ICP-OES is used routinely for the certification of elemental mass fraction in the 3100 series of elemental standard solution SRMs , and has also been used in other NIST measurements. Measurements involving ICP-OES procedures that are similar to the high-performance protocol have been reported by other laboratories. …”
mentioning
confidence: 99%
“…Inductively coupled plasma optical emission spectroscopy (ICP-OES) was one technique used for bulk quantification of Ge in the Si 0.86 Ge 0.14 bulk alloy as described by Rabb et al (2008). Two randomly selected 2 mm × 2 mm × 2 mm chips that had been cut from the alloy were analyzed.…”
Section: Methodsmentioning
confidence: 99%
“…The HP-ICP-OES technique has become a method of choice for many NIST measurements. These include certification measurements for NIST reference materials (RMs) and Standard Reference Materials (SRMs). For example, the technique has been used recently for the certification of the Be mass fraction in SRM 1877 Beryllium Oxide Powder .…”
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confidence: 99%