Accurate Capacitance Modeling and Characterization of Organic Thin-Film Transistors

Zaki, Tarek; Scheinert, S.; Hörselmann, Ingo; Rödel, Reinhold; Letzkus, Florian; Richter, H.; Zschieschang, Ute; Klauk, Hagen; Burghartz, Joachim N.

doi:10.1109/ted.2013.2292390

Cited by 57 publications

(38 citation statements)

References 19 publications

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“…After comparing experimental data from OTFTs with various channel lengths, we can suppose an empirical model for λ as Figure 11 compares the simulated and experimental gate-source (C gs ) and gate-drain (C gd ) capacitances of the OTFT; 18 the input parameter are W/L = 400 µm/200 µm, V fb = 1.2 V.…”

Section: Resultsmentioning

confidence: 99%

Compact model for organic thin-film transistor with Gaussian density of states

Wang

et al. 2015

AIP Advances

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Developing a compact model for organic thin-film transistors (OTFTs) would be significant for designing organic circuits. Contrasting the traditional silicon transistors, OTFTs are theorized using hopping transport and a Gaussian density of states. In this work, we present a new compact model for OTFTs by introducing hopping transport theory, a Gaussian density of states, and a physical mobility model. Our compact model is completely based on surface potential and its simulations do not require any threshold voltage. Simulations based on this model agree well with experimental data.

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Section: Resultsmentioning

confidence: 99%

Compact model for organic thin-film transistor with Gaussian density of states

Wang

et al. 2015

AIP Advances

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“…For dynamic measurements of device performance, impedance spectroscopy (IS) has proven to be a powerful tool for characterization . It is a frequency‐dependent method of measuring the linear response of the transistor: devices are configured in a DC steady‐state (for instance, with V GS and V DS held constant) while a time‐varying perturbation is added to an input.…”

Section: Characterizing Contact Resistance In Ofetsmentioning

confidence: 99%

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Waldrip

Jurchescu

Gundlach

et al. 2019

Adv Funct Materials

232

261

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Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto-)electronic applications. One example is the organic field-effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.semiconductors with superior intrinsic charge transport properties, there is a stringent need to improve the device properties in order to allow organic devices to fulfill their technological prospectives. In the organic semiconductor community, contact resistance (R C ) has come under increased scrutiny as it is apparent that the final device performance is often domi nated by carrier injection, rather than the transport through the semiconductor layer. Contact resistance can impact OFET development in multiple ways. First, if not accounted for, a high contact resistance may lead to inaccurate extraction of the device parameters. Second, any inaccuracies in parameter extraction can have significant consequences on material development, from generating incorrect structure-property relationships to discarding organic semiconductors whose efficient intrinsic electrical properties have been masked by inefficient contacts. Beyond OFET and semiconductor characterization, analog, low power, and high frequency applications require a greater level of device parameter control than has been obtained in typical DC, high-voltage OFETs. For analog applications, e.g., integration of conditioning circuits such as local sense amps for distributed flexible sensor arrays, nonlinearity of the transistor response inhibits proper functioning and limits applicability of common models used to design circuitry. Low power device development for novel materials are hindered by the high voltage turn-on and current suppression in devices with large R C . Considering high-frequency applications, Klauk suggest...

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“…They show typical electric characteristics of p-channel type samples and current increased by about 1.5 times to 2 times due to contact doping for respective channel lengths. The energy level of highest occupied molecular orbital (HOMO) for DNTT molecules is 5.19 eV [10], and that of lowest unoccupied molecular orbital (LUMO) for F 4 TCNQ is 5.24 eV [11]. These values are close each other, so that it is assumed that the hole density in DNTT is increased because F 4 TCNQ with high electron receptivity draws electrons from DNTT.…”

Section: Evaluation Of Output and Transfer Characteristicsmentioning

confidence: 89%

Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiphene Thin‐Film Transistors

Yamamoto

Noda²,

Wada

et al. 2017

Elect Comm in Japan

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Contact doping effects in p-channel dinaphthothienothiphene (DNTT) thin-film transistors with a bottomgate, top-contact configuration were investigated with both experimental and numerical approach. Characteristic variation in transistor parameters such as the gate threshold voltage and the field-effect mobility for devices with various channel lengths was suppressed by the contact doping with tetrafluorotetracyanoquinodimethane (F 4 TCNQ) as an acceptor dopant. The gate-voltage dependence of contact resistance and channel resistance was also evaluated separately to examine the contact doping effect in detail. In addition, device simulation considering a Schottky barrier at a metal/semiconductor interface successfully reproduced the experimental current-voltage characteristics by using a hole concentration of the active DNTT layer in the order of 10 17 cm −3 , which was estimated by capacitancevoltage measurement for a metal/insulator/semiconductor capacitor structure. This study suggests the importance of establishing both the carrier doping and carrier concentration measurements toward realizing practical applications of organic transistors. C⃝

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Accurate Capacitance Modeling and Characterization of Organic Thin-Film Transistors

Cited by 57 publications

References 19 publications

Compact model for organic thin-film transistor with Gaussian density of states

Compact model for organic thin-film transistor with Gaussian density of states

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiphene Thin‐Film Transistors

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