Accuracy verification of single-electron pumps with 0.2 ppm uncertainty

Robustness of single-electron pumps at sub-ppm current accuracy level

“…The experimental procedure and the following data analysis were performed along the lines explained in [6]. The optimal working point of the pump with ) and the type B contribution (0.084 µA A −1 ) from table 1 (raw data already used in [8]).…”

“…These measurements comprise variations of magnetic flux density, bias and gate voltages, and pump driving frequency, all of them being relevant operational parameters for GaAs-based SET pumps. Parts of the data shown here were already used in conference digest papers [7,8].…”

“…Averaging the current values from all 21 data points taken at the exit gate voltage V 2 dc = −244 mV yields the mean value (−0.10 ± 0.16) µA A −1 . The combined standard uncertainty of 0.16 µA A −1 consists of the type A contribution (0.13 µA A −1) and the type B contribution (0.084 µA A −1 ) from table 1 (raw data already used in[8]).…”

Robust operation of a GaAs tunable barrier electron pump

“…At the present time, the most practically useful combination of accuracy and high electron pumping rate has been achieved using electrostatically gated semiconductor quantum dots (QDs) operated as non-adiabatic tunable-barrier pumps [3] in the low-temperature decay cascade regime [4]. Using state-of-the-art current measurement techniques [5,6], there have been several reports of pumped current accurate at the part-per-million (ppm) level or better, at pump repetition rates in the range 0.5 GHz f 1 ⩽ ⩽ GHz, generating current 80 pA = I ef 160 P ⩽ ⩽ pA [5,[7][8][9][10][11], where e is the elementary charge. These studies were performed on a variety of device architectures: etch-defined [5,8,10] and gate-defined [7] QDs in GaAs heterostructures, and silicon nano-wire MOSFETs [9].…”

“…Using state-of-the-art current measurement techniques [5,6], there have been several reports of pumped current accurate at the part-per-million (ppm) level or better, at pump repetition rates in the range 0.5 GHz f 1 ⩽ ⩽ GHz, generating current 80 pA = I ef 160 P ⩽ ⩽ pA [5,[7][8][9][10][11], where e is the elementary charge. These studies were performed on a variety of device architectures: etch-defined [5,8,10] and gate-defined [7] QDs in GaAs heterostructures, and silicon nano-wire MOSFETs [9]. While very promising for the metrological application of electron pumps, most of these studies were performed on carefully tuned devices.…”