Accuracy of Y-function methods for parameters extraction of two-dimensional FETs across different technologies

Abstract

The accuracy of contact resistance values of two‐dimensional (2D) field‐effect transistors extracted with the Y ‐function considering the impact of the intrinsic mobility degradation is evaluated here. The difference between methodologies that take this factor into account and ignore it is pointed out by a detailed analysis of the approximations of the transport model used for each extraction. In contrast to the oftenly used approach where the intrinsic mobility degradation is neglected, a Y ‐function‐based method considering a more complete transport model yields contact resistance values similar to reference values obtained by other intricate approaches. The latter values are more suitable also to describe experimental data of 2D devices of different technologies. The intrinsic mobility degradation factor of 2D transistors is experimentally characterised for the first time and its impact on the device performance is described and evaluated.

An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors

“…It is worth to notice that in the device technologies studied here, θ ch is not negligible for the definition of θ as suggested elsewhere for 2D-based devices [31]. The latter is of key importance to determine whether the device performance is dominated by channel or contact phenomena [14].…”

“…The extraction of R c with this methodology for all kind of device architectures overcomes the challenging fabrication of TLM test structures which are generally limited to GBG devices [16], specially in graphene technologies [12], [29]. Values of θ ch for GFETs have been rarely reported in the literature with other methods [14]. Regarding the GFETs analyzed here, GBG devices have the lower θ ch owing to the full-gated channels in contrast to BG and TG devices, and hence, a better overall gate control over the channel is obtained with the former device architecture.…”

A Small-Signal Description of Black-Phosphorus Transistor Technologies for High-Frequency Applications

“…Small-signal parameters have been obtained at the operating bias point at which the pad de-embedded HF FoMs have been measured in [1]- [3]. R dc and R sc have been extracted with a Yfunction method [16] considering an underlying transport equation without simplifications [18]. R g values have been calculated…”

Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies

“…BPFETs, R C extracted here considers the effect of θ 0 , as well as a more complete model for I D , and hence, more accurate and complete information can be obtained by using equation ( 2) [18,23].…”