Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs

Adamu-Lema, Fikru; Compagnoni, Christian Monzio; Amoroso, Salvatore; Castellani, N.; Gerrer, Louis; Markov, Stanislav; Spinelli, A.S.; Lacaita, A.L.; Asenov, A.

doi:10.1109/ted.2012.2230004

Cited by 28 publications

(11 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6, the X T values obtained by means of (7) are shown. Although this equation is only valid for single oxide layers (and not for stacks), it is derived in the inversion regime, and it is inaccurate due to statistical variability [25], [26]; we consider that it can still provide some remarkable but only qualitative insights about the differences between nFETs and pFETs. As shown in Fig.…”

Section: Bias Dependence Of Capturementioning

confidence: 99%

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <tex-math notation="TeX">\(V_{\rm TH}\) </tex-math></inline-formula> Variability

Toledano-Luque

Degraeve

Roussel

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Relentless performance and density scaling of modern CMOS devices has come at the expense of circuit stability and variability. In this paper, we specifically reveal how switching traps can cause intolerable V TH shifts and fluctuations, which are even visible during the I D -V G tracing in nanometer-scaled devices. Exploiting this feature, we have developed a methodology for random telegraph noise assessment capable of determining the capture and emission times τ c and τ e , and their impact on V TH as a function of gate voltage V G and temperature T. This information is crucial for developing circuit simulators that assess the impact of single traps in the full V G swing and operational temperatures.Index Terms-Bias temperature instability (BTI), CMOS, high-κ, MOSFET, random telegraph noise (RTN).

show abstract

Section: Bias Dependence Of Capturementioning

confidence: 99%

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <tex-math notation="TeX">\(V_{\rm TH}\) </tex-math></inline-formula> Variability

Toledano-Luque

Degraeve

Roussel

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…The traps are located 3.3 eV below the oxide conduction band. The test device is a square, n-channel, bulk MOSFET with a 25 nm physical gate length, 1.2 nm SiO 2 gate oxide, and halo implants [15].…”

Section: Simulation Methodologymentioning

confidence: 99%

Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs

Markov

Amoroso

Gerrer

et al. 2013

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

We report a thorough 3-D simulation study of the correlation between multiple, trapped charges in the gate oxide of nanoscale bulk MOSFETs under bias and temperature instability (BTI). The role of complex electrostatic interactions between the trapped charges in the presence of random dopant fluctuations is evaluated, and their impact on the distribution of the threshold voltage shift and on the distribution of the number of trapped charges is analyzed. The results justify the assumptions of a Poisson distribution of the BTI-induced trapped charges and of the lack of correlation between them, when accounting for timedependent variability in circuits. Index Terms-Bias and temperature instability (BTI), complimentary metal-oxide-semiconductor (CMOS), random telegraph noise (RTN), reliability, variability.

show abstract

“…The original approach in [122] relied on the classical theory of direct tunneling into oxide defects [80,81], explicitly linking τ c and τ e to the space and energy position of the trap inside the oxide. Later results have, however, shown that capture/emission times in MOSFETs are not compatible with such a description [143,144], due to device variability effects on the time constants [145][146][147] and structural relaxation of defects [140,148], generating a large spread in time constants even for traps located close to the silicon/oxide interface and disrupting the classical correlation between τ c and τ e . The study of the microscopic properties of RTN traps is still an active research topic [149][150][151][152][153][154][155][156], but for our purposes we will adopt a pragmatic approach, assuming given distributions of capture/emission time constants that may be consistent with observations, without linking them to any particular trap location.…”

Section: Modelsmentioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

View full text Add to dashboard Cite

Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

show abstract

Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs

Cited by 28 publications

References 22 publications

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <tex-math notation="TeX">\(V_{\rm TH}\) </tex-math></inline-formula> Variability

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <tex-math notation="TeX">\(V_{\rm TH}\) </tex-math></inline-formula> Variability

Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Contact Info

Product

Resources

About