Heating (100) silicon at high temperature (say, higher than 850• C) in H 2 , cooling to 670-700 • C in the same ambient, and quenching to room temperature in N 2 results in environmentally robust, terraced 1 × 1 (100) SiH 2 . Evidence for this conclusion is based on angle-resolved x-ray photoelectron spectroscopy, atomic force microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, thermal programmed desorption, and reflection high-energy electron diffraction.