Accelerated life‐test experiments on low‐power rectifier diodes

Abstract

Low‐power rectifier diodes were stressed by different forward currents IF, reverse voltages UR, and ambient temperatures a for a time interval (0, t*) in order to analyse the resulting distributions. Owing to the limitations in the test time, t*, the gathering of comprehensive information about their performance requires high stress levels without exceeding either physical limits or the limits for initiating thermal runaway. First, the results of lifetime experiments related to the middle stress region were described by a Weibull distribution with constant shape parameter and stress‐dependent scale parameter. This model, however, did not fit sufficiently the typical features of the real‐life distribution. Therefore a non‐parametric measure called the average initial reliability in (O,t*) was defined using the experimental results. Its stress dependence was estimated. The results are guiding figures of stress conditions both for accelerated tests and for circuits with high demands on reliability.

Comparison of results from empirical ALT test to CAE simulation for wireless clients

“…Pecht et al (1992) discussed the influence of temperature on major IC failure mechanisms. Windel (1990) described lifetime experiments with low‐power rectifier diodes related to the middle stress region by a Weibull distribution. Chen et al (2006) investigated Sn3.5Ag0.75Cu solder joint reliability under thermal cycling.…”