Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3 µm

Mizuishi, K.; Hirao, M.; Tsuji, S.; Sato, Hitoshi; Nakamura, M.

doi:10.1143/jjap.19.l429

Cited by 24 publications

(3 citation statements)

References 14 publications

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“…The program concentrates on the projection of 1.3-^m laser performance to 10°C, which is the system operating temperature. To accomplish this, a significant portion of our effort is devoted to the following: (1) the determination of activa tion energy(s) that governs the thermally accelerated mechanism(s); (2) the aging law that describes the time evolution of current at a specific temperature; (3) the projection of performance to the system operating temperature of 10°C; and, concurrently, (4) the identifica tion of the dominant failure mechanism(s) that will determine the life of the laser.…”

Section: Introductionmentioning

confidence: 99%

1.3-μm Laser Reliability Determination for Submarine Cable Systems

Hakki

Fraley

Eltringham

1985

At&T Technical Journal

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To meet the stringent requirements of a submarine cable system, our 1.3-μϊα laser prequalification program has two objectives-first, to define the testing methodology that will accurately evaluate the potential reliability of the laser; and second, to obtain a preliminary indication of laser reliability on which the system configuration can be designed. Our testing methodology involves a combination of step-temperature, step-power, and isothermal test ing over the temperature interval between 10 and 80°C and power levels of 1 to 5 mW per facet. Our results show that the long-term degradation process is thermally accelerated, with a median activation energy of 1 eV and a standard deviation of 0.13 eV. By using these activation energies, in conjunc tion with our measurements of degradation rates, we can project laser perform ance to 10°C, i.e., system operating temperature. It is estimated that the median time to failure for "light bulb" operation at 10°C is over 2 X 10 7 hours; and with 98-percent probability it is greater than 5 X 10 6 hours. Hence, when viewed strictly in terms of light bulb sources of stimulated power, these 1.3-μιη lasers have adequate life. In addition, other potential operational malfunc tions are being investigated, and they do not seem to change our basic conclusion about the usefulness of these 1.3-μνα lasers for submarine cable application.

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Section: Introductionmentioning

confidence: 99%

1.3-μm Laser Reliability Determination for Submarine Cable Systems

Hakki

Fraley

Eltringham

1985

At&T Technical Journal

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“…Many degradation mechanisms involve the diffusion of atoms and hence possess an Arrhenius time-temperature dependence, i.e., a re action rate given by R « exp Ë2. kT (2) where k is Boltzmann's constant, T is the absolute temperature, and E a is the activation energy. More complicated temperature-dependent reaction rates might be used, e.g., the Eyring equation.…”

Section: Activation Energy Of the Saturable Initially Occurring Mode mentioning

confidence: 99%

“…13. Alternatively, one might suppose that the time duration (τ) required for stabilization also obeys an Arrhenius equation like (2), so that with Ä(150)/Ä(135) replaced by r(135)/r(150), it is calculated that (£ 0 ), « 1.2 eV, using τ βν (135 ο 0) » 24 hours and T av (150°C) » 8 hours. There is no a priori reason that both calculations should have given equal answers, even apart from uncertainty in the data.…”

Section: Activation Energy Of the Saturable Initially Occurring Mode mentioning

confidence: 99%

Implementation of the Proposed Reliability Assurance Strategy for an InGaAsP/InP, Planar Mesa, Buried Heterostructure Laser Operating at 1.3 μm for Use in a Submarine Cable

Nash

Sundburg

Hartman

et al. 1985

At&T Technical Journal

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We discuss the implementation of a strategy designed to provide laser-lightemitting reliability assurance for 1.3-μνα InGaAsP/lnP lasers of the planar mesa, buried heterostructure type for use in a submarine cable application. The testing regimes include initial characterization (cosmetic and light-current curve inspection), passive aging (elevated temperatures [85 to 175°C] without bias, with and without humidity [<85-percent relative humidity]), overstress active aging (high temperatures [150°C], high currents [250 mAdc]), and longterm rate-monitoring active aging (elevated temperature [60°C] burn-in [3 mW/facet]). Overstress testing is designed to compel a timely (~10 2 -hour) identification of premature failures, due to modes of degradation other than the long-term ultimately controlling wear-out mode, and to stabilize transient modes. To identify premature failures of the wear-out type, survivors of overstressing are subjected to rate monitoring in which wear-out degradation rates, established in a reasonable time (~10 3 hours), may be sorted. The principal results of the important overstress aging were the detection of an initially occurring saturable degradation mode, present to some extent in most lasers, and a regimen to force its rapid stabilization, so that it would not obscure determination of the activation energy of the wear-out mode. With a credibly determined value for the latter, it was deterministically inferred from * Authors are employees of AT&T Bell Laboratories.

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Semiconductor Lasers—Materials and Devices

Iga¹

1994

Fundamentals of Laser Optics

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Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3 µm

Cited by 24 publications

References 14 publications

1.3-μm Laser Reliability Determination for Submarine Cable Systems

1.3-μm Laser Reliability Determination for Submarine Cable Systems

Implementation of the Proposed Reliability Assurance Strategy for an InGaAsP/InP, Planar Mesa, Buried Heterostructure Laser Operating at 1.3 μm for Use in a Submarine Cable

Semiconductor Lasers—Materials and Devices

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