ac susceptibility and ESR studies on vapour phase grown Cd1−xMnxTe crystals

Reddy, K. Pratap; Rao, N. Madhusudhana; Reddy, D. Amaranatha; Reddy, B.K.

doi:10.1016/j.saa.2004.11.025

Cited by 7 publications

(4 citation statements)

References 25 publications

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“…The structure, electronic and magnetic properties of DMS strongly depend on the nature and concentration of the dopant. Several research groups [15][16][17] have investigated the effect of doping of magnetic transition elements and rare-earth elements into the host semiconductor compounds both theoretically and experimentally. Historical reports on DMS reveal that the II-VI host semiconductor materials when doped with transition magnetic element had greater solubility limit [18].…”

Section: Introductionmentioning

confidence: 99%

Room Temperature Ferromagnetism in Cr Doped ZnSe Powders Prepared by Solid State Reaction

Mallikarjana¹,

Sivasankar²,

Begam³

et al. 2016

J. Nano- Electron. Phys.

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Zn1-xCrxSe (x  0.00, 0.05, & 0.10) powders were prepared by solid state reaction method. The influence of chromium (Cr) doping into ZnSe on structural, optical and magnetic properties Zn1-xCrxSe powder samples was studied and reported. All the Zn1-xCrxSe powder samples were identified in zinc blende crystal structure. The lattice constant of Zn1-xCrxSe samples decreased with increase in Cr concentration. Diffuse reflectance measurements confirmed an increase in the band gap with increase of Cr concentration. The Zn1-xCrxSe samples exhibited clear hysteresis loop with enhanced room temperature ferromagnetism.

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Section: Introductionmentioning

confidence: 99%

Room Temperature Ferromagnetism in Cr Doped ZnSe Powders Prepared by Solid State Reaction

Mallikarjana¹,

Sivasankar²,

Begam³

et al. 2016

J. Nano- Electron. Phys.

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“…where N is the number of defects, K is constant of spectrum 9.1 10 12 , H 0 is the magnetic field corresponding to the center of signal, H is the width of the magnetic field from peak to peak (G), A is the height of the signal (cm), H m is modulation field (0.1 G Gs), P H is microwave Puissance (2 mW), and G e is gain detection (10000). Table (5) illustrates the number of defects at different temperatures of the investigated samples. It is clear from the table that as the temperature increases, number of defects or number of free radical increases.…”

Section: δS M (T H) = ) H Dhmentioning

confidence: 99%

“…Semiconductor materials containing manganese are of interest because of the manner in which the magnetic behavior is associated with the manganese can modify and complement the semiconductor properties [3,4]. Hence, the behavior of the compounds is either paramagnetic, spin glass or antiferromagnetic, depending on concentration of Mn [5].…”

Section: Introductionmentioning

confidence: 99%

Magnetic and Thermal Properties of Semimagnetic Semiconductors

2015

Egyptian Journal of Solids

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Measurements of the dynamic magnetic susceptibility χ as a function of temperature were made on polycrystalline semimagnetic semiconductor Cd 1-x Mn x Se (x = 0.1, 0.2 and 0.3). The magnetic susceptibility was investigated in the temperature range of 5-200K revealing the paramagnetic behavior described by the Curie-Weiss law and indicating the presence of antiferromagnetic exchange interactions between Mn ions. The 1/ χ m versus T curves indicates that for x=0.1 the behavior was a mixture of antiferromagnetic and spin-glass while for x = 0.2 and 0.3 shows spin-glass form. The temperature dependence of the EPR spectra for the investigated samples was measured in the temperature range 4 to 300k. The obtained g-factor of the investigated samples shows slight decrease with increasing the concentration of Mn. The calculated number of defects illustrates that increasing the temperature leads to an increase in the number of defects increases.

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“…The growth interface at a cononically tapered quartz tube is pulled at the rate of 0.5 cm/day through a temperature gradient of 15-20 °C /cm at about 1100 °C for about 5-7 days" [10] Microscopic studies, composition analyses, and studies of microhardness have shown that the epitaxial CdTe/CdHgTe variband heterosystem contains a developed system of dislocation ensembles of various nature (in-grown, mismatching, generated on the joint boundaries of three-dimensional islands, etc.) with segments inclined or parallel to the interface.…”

Section: Introductionmentioning

confidence: 99%

Solid State Synthesis and Characterization of Spintronics Material Cd<sub>0.55</sub> Hg<sub>0.45</sub> Te

Asghar

Awan

2010

AMM

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Polycrystalline spintronic material (Cd0.55Hg0.45Te) was synthesized by conventional solid state reaction. The samples ( = 5 mm and T = 1.5 mm) were prepared by uni-axial pressing. Samples were melted at 800°C for 3-2 hours. For chemical analyses, surface morphology and structural analyses, scanning electron microscopy (SEM) equipped with EDX system and X-ray diffraction studies were performed. XRD confirmed the cubic crystal structure. The Lattice constant of (Cd0.55Hg0.45Te) as determined by XRD was 0.6464 nm. The Miller indices (hkl) have been found by using crystallography method. The observed planes were (200), (210) and (331). The EDX analyses showed the typically compositions: Te 24.8% Cd 14.8% Al 5% and O2 46.4 % & C 9% (3 hours treatment) and Te 28.1% Cd 16% Al 4.1% and O2 39.3 %, Si 0.360% & C 12.1% (2 hours treatment) however we could not find any representative peak for Hg in all of the EDX analyses.

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ac susceptibility and ESR studies on vapour phase grown Cd1−xMnxTe crystals

Cited by 7 publications

References 25 publications

Room Temperature Ferromagnetism in Cr Doped ZnSe Powders Prepared by Solid State Reaction

Room Temperature Ferromagnetism in Cr Doped ZnSe Powders Prepared by Solid State Reaction

Magnetic and Thermal Properties of Semimagnetic Semiconductors

Solid State Synthesis and Characterization of Spintronics Material Cd<sub>0.55</sub> Hg<sub>0.45</sub> Te

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