AC conductivity of amorphous and polycrystalline Cd3As2 films on single crystal substrates of Al2O3

Morocho, A. A.; Pilyuk, E. A.; Захвалинский, В. С.; Nikulicheva, T. B.; Yapryntsev, M. N.; Novikov, V. U.

doi:10.1016/j.physb.2022.413927

Cited by 2 publications

(2 citation statements)

References 42 publications

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“…This leads to the lowest density of defect states and the lowest electron scattering at the grain boundary, allowing the electrons to move smoothly without being trapped. This greatly enhances the mobility of the material. ,, Polycrystalline films exhibit higher mobility compared to amorphous films, even up to 4 orders of magnitude higher. , For example, IGZO crystalline films have a mobility of about 80 cm 2 /V·s 1 , while IGZO amorphous films have a mobility of 10 cm 2 /V·s. ,− Amorphous Si has a mobility of 0.02 to 0.05 cm 2 /V·s, while polycrystalline silicon shows a mobility of 900 cm 2 /V·s . Furthermore, it is possible that we achieved an atomic concentration per film that has not been reached by anyone before.…”

Section: Resultsmentioning

confidence: 99%

“…6,19,45 Polycrystalline films exhibit higher mobility compared to amorphous films, even up to 4 orders of magnitude higher. 45,46 For example, IGZO crystalline films have a mobility of about 80 cm 2 /V•s 1 , while IGZO amorphous films have a mobility of 10 cm 2 /V•s. 8,47−49 Amorphous Si has a mobility of 0.02 to 0.05 cm 2 /V•s, 50 while polycrystalline silicon shows a mobility of 900 cm 2 /V•s.…”

Section: Variant Atomic Concentrationmentioning

confidence: 99%

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Comparative Study on the Effects of O₂ Flow Rate on As-Deposited Polycrystalline IAZO Films

Ahmad,

Zhang,

et al. 2023

ACS Appl. Eng. Mater.

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The research on oxide semiconductor thin-film transistors (OSTFTs) is experiencing exponential growth worldwide, aimed at enhancing the mobility, stability, film quality, and device performance while reducing the density of defect states in the channel material. In our study, we investigated indium aluminum zinc oxide (IAZO) films with varying O 2 flow rates of 25, 17, 8, and 3 sccm to optimize the channel material. Interestingly, we observed that as the flow rate of the O 2 decreased, the deposition rate increased exponentially. However, when the O 2 flow rate was set to 3 sccm, the films exhibited an extremely high density of defect states, low surface roughness, and different crystalline phases, including Zn, Al 2 O 3 , and ZnO crystals oriented in various directions. On the other hand, films deposited with an O 2 flow rate of 8 sccm demonstrated the second-highest deposition rate with high film quality, indicating a trade-off between film quality and deposition rate. Our analysis using grazing incidence X-ray diffraction and ultraviolet photoelectron spectroscopy techniques revealed very high-quality films and a low density of defect states, respectively. Remarkably, we report for the first time the successful deposition of c-axis aligned crystalline (CAAC) IAZO films at room temperature with an O 2 flow rate of 8 sccm, which exhibited the second-highest deposition rate, high film quality, low density of defect states, a comparable electron affinity (χ = 3.53 eV) to IGZO, a very high mobility (244.65 cm 2 /V•s), and a suitable carrier concentration (3.25 × 10 18 cm −3 ). CAAC-IAZO can be a potential candidate to serve as a promising channel material for enhancing device performance and addressing stability concerns in OSTFTs.

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Section: Resultsmentioning

confidence: 99%

Section: Variant Atomic Concentrationmentioning

confidence: 99%

Comparative Study on the Effects of O₂ Flow Rate on As-Deposited Polycrystalline IAZO Films

Ahmad,

Zhang,

et al. 2023

ACS Appl. Eng. Mater.

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Organometallic dichloro bis l-Valine Zinc(II) nonlinear optical crystal growth, nucleation investigations and characterization (DCBVZ)

Anbuselvi,

Bharath,

Joseph

et al. 2024

J Mater Sci: Mater Electron

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AC conductivity of amorphous and polycrystalline Cd3As2 films on single crystal substrates of Al2O3

Cited by 2 publications

References 42 publications

Comparative Study on the Effects of O₂ Flow Rate on As-Deposited Polycrystalline IAZO Films

Comparative Study on the Effects of O₂ Flow Rate on As-Deposited Polycrystalline IAZO Films

Organometallic dichloro bis l-Valine Zinc(II) nonlinear optical crystal growth, nucleation investigations and characterization (DCBVZ)

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AC conductivity of amorphous and polycrystalline Cd3As2 films on single crystal substrates of Al2O3

Cited by 2 publications

References 42 publications

Comparative Study on the Effects of O2 Flow Rate on As-Deposited Polycrystalline IAZO Films

Comparative Study on the Effects of O2 Flow Rate on As-Deposited Polycrystalline IAZO Films

Organometallic dichloro bis l-Valine Zinc(II) nonlinear optical crystal growth, nucleation investigations and characterization (DCBVZ)

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Product

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Comparative Study on the Effects of O₂ Flow Rate on As-Deposited Polycrystalline IAZO Films

Comparative Study on the Effects of O₂ Flow Rate on As-Deposited Polycrystalline IAZO Films