Comparative Study on the Effects of O2 Flow Rate on As-Deposited Polycrystalline IAZO Films
Dilshad Ahmad,
Jing Zhang,
Jing Xu
et al.
Abstract:The research on oxide semiconductor thin-film transistors (OSTFTs) is experiencing exponential growth worldwide, aimed at enhancing the mobility, stability, film quality, and device performance while reducing the density of defect states in the channel material. In our study, we investigated indium aluminum zinc oxide (IAZO) films with varying O 2 flow rates of 25, 17, 8, and 3 sccm to optimize the channel material. Interestingly, we observed that as the flow rate of the O 2 decreased, the deposition rate incr… Show more
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