AC conductivity and structural properties of Mg-doped ZnO ceramic

Othman, Zayani Jaafar; Hafef, Olfa; Matoussi, Adel; Rossi, Francesca; Salviati, G.

doi:10.1007/s00339-015-9447-y

Cited by 16 publications

(8 citation statements)

References 53 publications

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“…The ac conductivity was observed to decrease logarithmically with an increase in Mg doping. The mechanism of ac conductivity was explained based on correlated barrier hopping (CBH) model for undoped and the small polaron tunneling (SPT) model for Zn 0.64 Mg 0.36 O and Zn 0.60 Mg 0.40 O composites . Similarly, the carrier concentration, modification of the electronic band structure and temperature induced metal‐semiconductor transition has been reported by Saha et al for Ga‐doped ZnO hexagonal nanocrystals.…”

Section: Introductionmentioning

confidence: 88%

“…Zn ions when substitutionally doped by rare earth (RE) or transition‐metal (TM) ions makes ZnO among the promising materials in the field of spintronics . It possesses optoelectronic applications, such as UV laser diode, light‐emitting diode, and photonics.…”

Section: Introductionmentioning

confidence: 99%

“…Applications such as high‐speed integrated packages demand materials with dielectric constant below 3.5 in contrast to the satellite communication applications that require materials with low dielectric loss and dielectric constant equal to 2.5. Several research groups have reported the improvement in the dielectric properties of ZnO via doping of RE and TM ions for various applications . Yadav et al reported the effect of Eu doping in ZnO on dielectric, ferroelectric, and piezoelectric applications.…”

Section: Introductionmentioning

confidence: 99%

“…Zn ions when substitutionally doped by rare earth (RE) or transition-metal (TM) ions makes ZnO among the promising materials in the field of spintronics. [1][2][3][4][5][6] It possesses optoelectronic applications, such as UV laser diode, lightemitting diode, and photonics. It has high excitonic binding energy (60 meV) and this energy is a function of the dielectric constant of the material.…”

Section: Introductionmentioning

confidence: 99%

“…Several research groups have reported the improvement in the dielectric properties of ZnO via doping of RE and TM ions for various applications. 1,2,4,[14][15][16][17] Yadav et al 14 reported the effect of Eu doping in ZnO on dielectric, ferroelectric, and piezoelectric applications. The group reported a higher dielectric constant and ferroelectric phase transition at 230°C.…”

Section: Introductionmentioning

confidence: 99%

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Effect of dilute concentrations of Sm on the temperature‐dependent electrical and dielectric properties of ZnO

Arora

Kumar²,

Kaur

et al. 2018

J Am Ceram Soc

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Compounds of undoped and samarium (Sm) doped ZnO have been prepared by standard solid‐state reaction method. X‐ray diffraction (XRD), Williamson‐Hall (W‐H) analysis, Transmission Electron Microscopy (TEM), temperature‐dependent electrical and dielectric studies have been done to characterize these materials. Inclusion of Sm as dopant in hexagonal wurtzite ZnO changes the lattice parameters to a small extent with some Sm aggregation at higher concentration. Also, the mean particle sizes of ZnO:Sm compounds showed an inter‐correlation with the Scherrer method, W‐H analysis as well as with TEM results. The electrical resistivity depicts an exponential decay and metal‐semiconductor transition (MST) at ~300 K for the pristine sample whereas there is large decrement in the resistivity with Sm doping. The analysis of σac of ZnO suggests that the power law is obeyed and indicated an increase in the ac conductivity with Sm content. The mechanism behind this type of conductivity is elucidated by small polaron tunneling (SPT) model of conductivity. The dependence of ln dc on the temperature inverse shows that the traps of electrons are thermally activated such that low and high temperature activation energies confirm the presence of vacancies and interstitials of both O and Zn ions. Thus, a high value of dielectric constant makes these materials suitable for high frequency and charge storage device applications.

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Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%