AC characteristics of optically controlled MESFET (OPFET)

Noise modeling of an optically controlled MESFET (OPFET)

“…The NEP of the OPFET can be computed from Eq. (15). Because the numerator and the denominator of the equation are related to the received optical power in a complicated fashion, an analytical expression for the NEP cannot be obtained.…”

“…Optically controlled field-effect transistors (OPFETs) fabricated with Schottky gate configuration have drawn considerable attention in recent years due to their potential application as optically controlled microwave devices, including photodetectors in longhaul optical communication systems [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Optically controlled MESFETs are particularly suitable for application in microwave monolithic integrated circuits (MMICs) [5,19] and optoelectonic integrated circuits (OEICs) [20] because of their integrated circuit compatibility.…”

“…Optically controlled MESFETs are particularly suitable for application in microwave monolithic integrated circuits (MMICs) [5,19] and optoelectonic integrated circuits (OEICs) [20] because of their integrated circuit compatibility. A number of theoretical and experimental works have been carried out to examine the characteristics of the device in the illuminated condition [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. The studies reported so far reveal that both the dc as well as microwave characteristics of the device change when the device is exposed to optical radiation of suitable wavelength.…”

Two Dimensional Modeling of Nonuniformly Doped MESFET Under Illumination

“…The key advantage of the MESFET is the higher mobility of the carriers in the channel as compared to the MOSFET [2]. In MESFETs the higher mobility leads to a higher current, transconductance and transit frequency of the device [3,4] making it suitable for high speed MMICs applications. In addition to this, the buried channel in MESFETs yields a better noise performance.…”

IV and Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods

“…Solving the continuity equation to obtain the current-voltage characteristics is a major area of research. Existing researches include perturbation method [3] and analytical methods [4]- [7] to solve the continuity equation of the OPFET. In this paper, the finite difference methods are used to solve the continuity equations using finite difference equations to approximate derivatives.…”