Ac Back Surface Recombination in N+-P-P+ Silicon Solar Cell: Effect of Temperature

Abstract

Excess minority carrier's diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of polychromatic illumination is resolved. Using conditions at the base limits involving recombination velocities Sf and Sb, respectively at the junction (n+/p) and back surface (p+/p), the expression of the excess minority carriers' density  is determined. The density of photocurrent Jph (T, ) is represented according to the recombination velocity at the junction for different temperature values. The expression of the ac back surface recombination velocity Sb of minority carriers is then deduced depending on frequency of modulation, temperature, electronic parameters (D) and the thickness of the base. Bode and Nyquist diagrams are used to analyze, both diffusion coefficient and back surface recombination of excess minority carriers submitted to Umklap process.

Derivative of Ac back surface recombination velocity as applied to n+/p/p+ silicon solar cell optimum base thickness determination: Effect of both temperature and frequency

“…Previous works have plotted dynamic diffusion coefficient [14,15,[38][39][40][41][42] of minority carriers in the base of the solar cell (Eq. 7).…”

“…The Ac photocurrent density Jph (Sf, Sb, D(ω, T), H α) is obtained and allows to deduce the AC expression Sb(D(ω, T), H α) of minority charge carriers dynamic recombination velocity [11][12][13][14][15] on the base back side (p/p+). The graphic study of this expression as a function of thickness (H), made it possible to deduce a technique for determining the optimum thickness [16][17][18][19][20][21] of the base (Hopt).…”

Determination of the Base Optimum Thickness of Back Illuminated (n<sup>+</sup>/p/p<sup>+</sup>) Bifacial Silicon Solar Cell, by Help of Diffusion Coefficient at Resonance Frequency

“…The solution of Equation ( 14) leads to the expressions of AC recombination velocity in the rear surface [16] [17] [18] [19] [20] given by Equations ( 15) and ( 16):…”

AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature

“…The AC recombination velocity (Sb), can be presented, through its equivalent electric model like a pure resistance (associated with Re(Sb)), in series with both imperfect capacitor (capacitor in parrallel with resistor) and inductance (inductance in parallel with a resistor) undergoing the effects of the temperature [25] [34] [63]. Journal of Electromagnetic Analysis and Applications…”

“…5) External conditions applied to solar cell i.e. : mono or polychromatic illumination [24], temperature (T) [25], electromagnetic field (E, B) [26], irradiation flow (ϕp) by charged particles [27].…”