Absorption spectra of Ti-doped GaAs

Hennel, A. M.; Brandt, C.D.; Wu, Y.-T.; Bryskiewicz, T.; Ko, Kwang-Cheol; Łagowski, J.; Gatos, H. C.

doi:10.1103/physrevb.33.7353

Cited by 28 publications

(9 citation statements)

References 5 publications

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“…These transitions are labelled by 1 to 6 in figure 4. In particular, this level scheme, which is totally different from that usually assumed in the literature (see references [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]), shows that:…”

Section: Experimental Details and Resultsmentioning

confidence: 86%

“…Information on the excited 2 T 2 state is available from different optical absorption (OA) and photoluminescence (PL) experiments which involve also the ground state. At low temperatures, the OA spectra in GaAs and InP are characterized by two sharp peaks of the 2 E-2 T 2 zero-phonon line (ZPL) located at 4565.5 cm −1 and 4589.4 cm −1 in GaAs [1,7,[14][15][16] and at 4409.4 cm −1 and 4437.0 cm −1 in InP [1,7,15]. In GaP, the same features have been observed; however, the first peak was found to be split into two components located at 4873.0 cm −1 and 4876.3 cm −1 [17].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effects of uniaxial stress on the absorption lines of and the nature of the Jahn-Teller coupling

Al-Shaikh

Qiu

Roura

et al. 1998

J. Phys.: Condens. Matter

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Experiments showing the effects of uniaxial stress on the structure of the zero-phonon line (ZPL) obtained in the optical absorption spectrum from a ion in GaP are described and interpreted using a new theoretical model. It is found that the components of the ZPL are split when the stress is applied along the , and axes. These results together with the spectra observed without applied stress, show that previous energy level diagrams for this centre cannot be correct. A vibronic model is used to describe this system which includes coupling to e modes in the ground states, to both e and modes in the excited excited states and to modes between and . The model is shown also to give a good explanation of the published Zeeman data obtained from photoluminescence measurements as well as the new uniaxial stress data presented here. A brief discussion is given of the type of Jahn-Teller effect operational in this system emphasizing that it is not necessarily of the orthorhombic type in the excited state.

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Section: Experimental Details and Resultsmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Effects of uniaxial stress on the absorption lines of and the nature of the Jahn-Teller coupling

Al-Shaikh

Qiu

Roura

et al. 1998

J. Phys.: Condens. Matter

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“…The interest in these compounds cames from the need of high resistivity materials with a good thermal stability for electronic and optoelectronic devices. The electron paramagnetic resonance (EPR) spectra in GaP [20] and GaAs [17], the optical spectra of GaAs, [16,21] InP [21] and GaP [19,23,24] show evidence of JT effect. Conflicting interpretative models have been proposed in literature, and the more recent one, suggested by Al-Shaikh et al [24], considers a JT coupling to trigonal and tetragonal modes (even if in a not complete quantum mechanical treatment) which by analyses tells the effect of uniaxial stress on the optical spectra.…”

Section: +mentioning

confidence: 96%

“…Titanium-doped -semiconductors have been the object of quite a large number of studies [16][17][18][19][20][21][22][23][24]. The interest in these compounds cames from the need of high resistivity materials with a good thermal stability for electronic and optoelectronic devices.…”

Section: +mentioning

confidence: 99%

Dynamic Jahn-Teller effect in crystals doped with 3d ions

Martinelli

Bevilacqua

Vogel

2013

Optical Properties of 3d-Ions in Crystals: Spectroscopy and Crystal Field Analysis

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This chapter is devoted to the study of the dynamic Jahn-Teller effect on the optical spectra of 3d-ions impurities in crystals, with particular attention to the theoretical efforts addressed to the interpretation of the experimental results. The presentation assumes that the reader is familiar with the spectroscopic notation for atomic energy levels. In addition, basic concepts and notation of point-group theory are also used. First, we will present a survey of the main experimental and theoretical results according to the electronic configuration. Then we discuss with a tutorial style the main contributions needed to model the optical spectra of the Jahn-Teller active 3d-ions impurities and asimple example is discussed in details. Next we concentrate on the calculation procedures required to address realistic systems. Some applicative examples of the proposed procedure are described in details.

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“…Отметим также, что рассмотренная модель предполагает, что спин-орбитальное расщепление исходного состояния связанной дырки ( SO ) значительно превышает абсолютные величины A и f i ε ′ i . В принципе для акцепторов в GaAs величина этого расщепления может составлять и несколько meV [26], и тогда возможно, что…”

Section: изменение положения и поляризации полосы излучения Mn Ga приunclassified

Акцепторный центр Mn-=SUB=-Ga-=/SUB=- в GaAs ( О б з о р )

Аверкиев¹,

Гуткин²

2018

Физика Твердого Тела

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Описана модель акцептора Mn Ga в GaAs, в которой Ŵ 8 исходное основное состояние связанной дырки изменяется из-за антиферромагнитного обменного взаимодействия с пятью 3d-электронами остова Mn. Рассмотрены энергетический спектр акцептора и волновые функции его состояний, а также их изменение под влиянием деформаций, электрических и магнитных полей. Приведены выражения для описания различных свойств изолированных акцепторов Mn Ga в GaAs, и проанализированы данные ряда экспериментов (изменение спектров и поляризации люминесценции и поглощения Mn 0 Ga при одноосных давлениях и в магнитном поле, спектры ЭПР, температурная зависимость магнитной восприимчивости, циркулярная поляризация фотолюминесценции при возбуждении поляризованным светом в магнитном поле и др.). Продемонстрировано, что в некоторых случаях необходимо учитывать существование в кристалле случайных электрических и деформационных полей, расщепляющих состояния акцептора. Результаты этого анализа показывают, что указанная модель хорошо согласуется c большинством экспериментальных результатов. Величина константы обменного взаимодействия лежит в диапазоне 3−5 meV.Работа была частично поддержана проектом РНФ 14-42-00015 (выполнение теоретических расчетов и оценок) и Программой Президиума РАН № 9 " Терацерцовая оптоэлектроника и спинтроника".

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Absorption spectra of Ti-doped GaAs

Cited by 28 publications

References 5 publications

Effects of uniaxial stress on the absorption lines of and the nature of the Jahn-Teller coupling

Effects of uniaxial stress on the absorption lines of and the nature of the Jahn-Teller coupling

Dynamic Jahn-Teller effect in crystals doped with 3d ions

Акцепторный центр Mn-=SUB=-Ga-=/SUB=- в GaAs ( О б з о р )

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