2005
DOI: 10.1209/epl/i2005-10193-0
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Absorption of 90° domain walls to oxygen vacancies investigated through internal friction technique

Abstract: We found that 90 • domain walls are absorptive to oxygen vacancies and the absorbing degree was related with the morphology of 90 • domain walls: curved 90 • domain walls are more absorptive to oxygen vacancies compared with straight 90 • domain walls. Therefore, in ferroelectric materials with curved 90 • domain walls, the density of oxygen vacancies diffusing to and subsequently pinning the 180 • domain walls is greatly suppressed, resulting in their excellent fatigue resistance.

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Cited by 15 publications
(4 citation statements)
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“…The trap energy of an oxygen vacancy at the DW is given as E trap = E vf (V O c domain ) – E vf (V O c DW ) = 0.32 eV, which is consistent with previous study . This indicates that the oxygen vacancies are more likely to be trapped at DWs, which results in a high oxygen vacancy concentration at the DW center, as has also been extensively investigated previously. , Experimental observations have also shown a high accumulation of oxygen vacancies near DWs and approximately 90% of total oxygen vacancies can be absorbed by 90° DWs. , Note that the introduction of the oxygen vacancies usually influence the ferroelectric property of the host material. , In the case of DW oxygen vacancy, the induced ferroelectric disturbance is nonlinear and complicated due to its low symmetry (see Supporting Information Figure S2). However, such effect is small (within 3% of bulk value) and only confined around the vacancy site, which will not considerably affect the polarization property of the DW.…”
supporting
confidence: 89%
See 1 more Smart Citation
“…The trap energy of an oxygen vacancy at the DW is given as E trap = E vf (V O c domain ) – E vf (V O c DW ) = 0.32 eV, which is consistent with previous study . This indicates that the oxygen vacancies are more likely to be trapped at DWs, which results in a high oxygen vacancy concentration at the DW center, as has also been extensively investigated previously. , Experimental observations have also shown a high accumulation of oxygen vacancies near DWs and approximately 90% of total oxygen vacancies can be absorbed by 90° DWs. , Note that the introduction of the oxygen vacancies usually influence the ferroelectric property of the host material. , In the case of DW oxygen vacancy, the induced ferroelectric disturbance is nonlinear and complicated due to its low symmetry (see Supporting Information Figure S2). However, such effect is small (within 3% of bulk value) and only confined around the vacancy site, which will not considerably affect the polarization property of the DW.…”
supporting
confidence: 89%
“…Note also that oxygen vacancies are easily trapped and accumulate at the DW center due to their large trap energy, which results in a high concentration of magnetized vacancies at the DW. Experimental observations have also shown a high concentration of oxygen vacancies at the DW. , As a result, a considerable fraction of a ferroelectric DW is possible to be magnetized. This self-assembling nature of oxygen vacancies and the localized character of emerging spin moments thus turn the DW into a multiferroic atomic layer due to the atomically thin geometry.…”
mentioning
confidence: 99%
“…It is furthermore assumed that oxygen vacancies play a key role in ageing and fatigue of ferroelectric materials by impeding domain wall motion or by acting as local disturbances of the polarization (see e.g., Refs. [15][16][17][18][19]. For this reason, oxygen vacancies and their associates have been intensively studied in experimentally (see e.g., Refs.…”
Section: Introductionmentioning
confidence: 99%
“…The acceptor dopant produces oxygen vacancies in the system. Such oxygen vacancies can migrate inside the system [24] and intrinsically form in the whole domain volume [18,25,26] a short-range order configuration as a result of their interaction with crystal symmetry during aging. When cooling down from the paraelectric cubic phase, the unaged acceptor-doped ferroelectric sample tends to form a cubic defect symmetry with the configuration of oxygen vacancies randomly distributed around the acceptor dopant (fig.…”
mentioning
confidence: 99%