Aging-induced domain memory in acceptor-doped perovskite ferroelectrics associated with ferroelectric-ferroelectric transition cycle

Gao, Jinghui; Xue, Dezhen; Zhang, Lixue; Wang, Yu; Bao, Huixin; Zhou, Chao; Liu, Wenfeng; Chen, Wei; Ren, Xiaobing

doi:10.1209/0295-5075/96/37001

Cited by 8 publications

(4 citation statements)

References 33 publications

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“…which shows agreement with the experiment results in the literature [15,17]. Thus E in evolves as a classic Debye relaxation during paraelectric aging.…”

Section: Modelingsupporting

confidence: 92%

“…The ferroelectric aging effect, referring to a time dependent change of physical properties, is one of the most ineluctable obstacles to the reliability of ferroelectric devices [12][13][14][15]. Practically, as time goes by, ferroelectric aging manifests itself by shifting the typical ferroelectric hysteresis loop along the field-axes or constricting its shape into a double one (for poled or unpoled samples respectively), whilst decreasing the dielectric and piezoelectric response [6].…”

Section: Introductionmentioning

confidence: 99%

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Modeling the paraelectric aging effect in the acceptor doped perovskite ferroelectrics: role of oxygen vacancy

Zhou

Xue

Ding

et al. 2013

J. Phys.: Condens. Matter

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The time dependence of physical properties in the paraelectric phase was probed recently in a Mn(3+) doped (Ba0.8Sr0.2)TiO3 ceramic, providing a simple situation (without spontaneous polarization or domain walls) to quantify the role of the oxygen vacancy during aging. In the present study, we propose a quantitative model for paraelectric aging to understand how the distribution of the oxygen vacancy evolves with time and consequently influences the dielectric response of the paraelectric phase. First, by comparing dielectric behavior of paraelectric aging in a Mn(3+) doped (Ba0.75Sr0.25)TiO3 ceramic and the dielectric tunable effect, an internal bias field E(in) related to the oxygen vacancy is shown to exist in the paraelectric phase. Second, by introducing such a time dependent E(in) in a Landau-type model, we reproduce the dielectric response of Mn(3+) doped (Ba0.8Sr0.2)TiO3 ceramic during paraelectric aging. It is suggested that the increase of dielectric permittivity can be ascribed to the decrease of E(in) with time. The investigation of paraelectric aging is helpful for understanding the role of the oxygen vacancy in influencing the physical properties of ferroelectric materials.

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“…which shows agreement with the experiment results in the literature [15,17]. Thus E in evolves as a classic Debye relaxation during paraelectric aging.…”

Section: Modelingsupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Modeling the paraelectric aging effect in the acceptor doped perovskite ferroelectrics: role of oxygen vacancy

Zhou

Xue

Ding

et al. 2013

J. Phys.: Condens. Matter

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“…(2) The domain wall effect involves the oxygen vacancy migration to the domain walls and pinning of the domain walls electrically or elastically [45,46]. (3) The volume effect refers to the reorientation of point defects with respect to the PS direction with the whole volume, and thus stabilizes the ferroelectric domain states [47][48][49][50][51][52][53]. Among them, the volume effect can explain all ferroelectric aging effects in different systems, and is thus the intrinsic effect for ferroelectric aging.…”

Section: Large Non-linear Electrostrain In Aging Point-defect-doped Bmentioning

confidence: 99%

Recent Progress on BaTiO3-Based Piezoelectric Ceramics for Actuator Applications

et al. 2017

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Due to issues with Pb toxicity, there is an urgent need for high performance Pb-free alternatives to Pb-based piezoelectric ceramics. Although pure BaTiO 3 material exhibits fairly low piezoelectric coefficients, further designing of such a material system greatly enhances the piezoelectric response by means of domain engineering, defects engineering, as well as phase boundary engineering. Especially after the discovery of a Ba(Zr 0.2 Ti 0.8 )O 3 -x(Ba 0.7 Ca 0.3 )TiO 3 system with extraordinarily high piezoelectric properties (d 33 > 600 pC/N), BaTiO 3 -based piezoelectric ceramics are considered as one of the promising Pb-free substitutes. In the present contribution, we summarize the idea of designing high property BaTiO 3 piezoceramic through domain engineering, defect-doping, as well as morphotropic phase boundary (MPB). In spite of its drawback of low Curie temperature, BaTiO 3 -based piezoelectric materials can be considered as an excellent model system for exploring the physics of highly piezoelectric materials. The relevant material design strategy in BaTiO 3 -based materials can provide guidelines for the next generation of Pb-free materials with even better piezoelectric properties that can be anticipated in the near future.

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“…Many researchers dedicate to study the lead zirconate titanate (PZT) family1215, the barium titanate (BT) family689131416171819202122 and some other lead-free compositions23 to develop reasonable theories to explain the aging phenomenon. There are three theories that have been proposed: grain boundary effect, domain wall effect and volume effect58.…”

mentioning

confidence: 99%

Rapid stability of ferroelectric polarization in the Ca, Ce hybrid doped BaTiO3 ceramics

Liu

Zhang

Wang

et al. 2016

Sci Rep

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In this work, we report a rapid stability phenomenon of ferroelectric polarization in the Ca, Ce hybrid doped BaTiO3 ceramics (BCaxT+BTCe8) (x = 10, 20, 24, 30 mol%) prepared by separate doping Ca2+ and Ce4+ ions. Double hysteresis loops are identified in the aged BCaxT+BTCe8 samples; meanwhile, the polarization of these loops present a rapid decrease within very short aging time (about 1 h), and then the polarization remains almost unchanged over the followed ~1000 h. This phenomenon is not reported in previous researches. Raman scattering spectrum indicates that oxygen vacancies are generated because of Ca2+ ions entering into Ti sites partly in the BCaxT+BTCe8 samples, and then the oxygen vacancies are quantitatively characterized by half of the Ce3+ content through the XPS test. The emergence of the aging phenomenon is explained through the defect dipole reorientation mechanism. The larger radius of Ca2+ ions is further discussed as a possible reason for the rapid stability phenomenon of ferroelectric polarization. It may provide an effective design method from the viewpoint of the ionic radius to accelerate polarization stability, and thus to facilitate the possible practical applications of the aging effect.

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Aging-induced domain memory in acceptor-doped perovskite ferroelectrics associated with ferroelectric-ferroelectric transition cycle

Cited by 8 publications

References 33 publications

Modeling the paraelectric aging effect in the acceptor doped perovskite ferroelectrics: role of oxygen vacancy

Modeling the paraelectric aging effect in the acceptor doped perovskite ferroelectrics: role of oxygen vacancy

Recent Progress on BaTiO3-Based Piezoelectric Ceramics for Actuator Applications

Rapid stability of ferroelectric polarization in the Ca, Ce hybrid doped BaTiO3 ceramics

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