2020
DOI: 10.1116/6.0000100
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Absorption, discharge, and internal partitioning behavior of hydrogen in the tantalum and tantalum oxide system investigated by in situ oxidation SIMS and ab initio calculations

Abstract: Hydrogen behavior in tantalum and tantalum oxide thin films was examined using the in situ oxidation secondary ion mass spectrometry (in situ oxidation SIMS) method previously developed by the authors. Oxidation of Ta films by the introduction of O2 into the sputter deposition chamber immediately after film growth was found to reduce the amount of H absorbed in the Ta films by 2.7 times for samples exposed to lab air at ambient temperature; the difference increased to 4.8 times for samples exposed to air at 30… Show more

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Cited by 4 publications
(4 citation statements)
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“…order to monitor the BIB, 300 C were collected on target made as Ta 17 2 O 5 targets but using Ultra Pure Water (UPW), with natural (0.04%) 17 O abundance. Tantalum is, indeed, a natural absorber of H and D [16] and the p+D (Q = 5493 keV) reaction produces a single γ-ray very close in energy to the 17 O(p, γ) 18 F 65 keV resonance γ-ray, see Fig. 3.…”
Section: Analysis and Preliminary Resultsmentioning
confidence: 93%
“…order to monitor the BIB, 300 C were collected on target made as Ta 17 2 O 5 targets but using Ultra Pure Water (UPW), with natural (0.04%) 17 O abundance. Tantalum is, indeed, a natural absorber of H and D [16] and the p+D (Q = 5493 keV) reaction produces a single γ-ray very close in energy to the 17 O(p, γ) 18 F 65 keV resonance γ-ray, see Fig. 3.…”
Section: Analysis and Preliminary Resultsmentioning
confidence: 93%
“…res. = 65 keV resonance, a well-known problem of tantalum is its ability to store hydrogen and deuterium [42]. With the modest energy resolution of the BGO detector, the signature of a single γ-ray produced by the 2 H(p, γ) 3 He reaction (Q = 5493 keV) cannot be resolved from the signal of 17 O(p, γ) 18 F (Q = 5607 keV).…”
Section: Shielding Evolution and Background Reductionmentioning
confidence: 99%
“…Tantalum (Ta) is a widely used material in chemistry, medical applications, electronics, aerospace and nuclear industry [9] because of its high melting temperature, excellent room-temperature ductility [10] and outstanding corrosion resistance [5,11]. Ta, similar to titanium (Ti), exhibits exothermic hydrogen absorption which results in a much higher hydrogen isotopes (HIs) inventory compared to other refractory metals such as tungsten (W) and molybdenum (Mo) [12][13][14]. In addition, the low sputtering rate of Ta by HIs (see figure 1), as well as the high radiation damage resistance of Ta to neutrons and gamma radiation [15], makes it a promising candidate material for the HIs retaining first-wall interface of laboratory fusion devices such as WHAM.…”
Section: Introductionmentioning
confidence: 99%
“…However, it has been shown that Ta subjected to a high dose of HIs and subsequent thermal cycling may result in structural modifications due to a possible formation of various hydride states of Ta [20 -22]. Moreover, oxidation of Ta surface may reduce HIs absorption [13,23] affecting the desired functionality of the coatings as the retaining first-wall material of Plasma-Facing Components (PFCs). Thus, it is important to systematically investigate the evolution of surface and bulk morphology, chemical composition, mechanical properties and retention mechanisms in the cold spray coatings subjected to high hydrogen fluxes and thermal cycling at elevated temperatures matching the expectations for PFCs in fusion devices.…”
Section: Introductionmentioning
confidence: 99%