Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles

Abstract

Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio frequency (RF) sputtering at room temperature. The influence of the film’s composition and the annealing temperature on the film’s optical absorption is investigated. The results show that all the NiSi/Si films and AlSi/Si films possess higher absorption ability compared to a pure a-Si film (60 nm). After annealing from 400 to 600 °C under vacuum for 1 h, the Si layer remains amorphous in both NiSi/Si films and AlSi/Si films, while the NiSi layer crystallizes into NiSi2 phase, whereas Al atoms diffuse through the whole film during the annealing process. Consequently, with increasing the annealing temperature, the optical absorption of NiSi/Si films increases, while that of AlSi/Si films obviously degrades.

Research Progress of Transparent Electrode Materials with Sandwich Structure

“…As the nonrenewable and highly polluting nature of fossil energy sources and the relatively high carbon emissions gain more attention from society, the importance of finding efficient and easily accessible clean energy sources is self-evident [ 1 ]. Solar energy is undoubtedly a stable and easily available clean energy source, and transparent electrodes play a key role in solar cells [ 2 ]. The working part of a solar cell consists of front and rear electrodes and a photoelectric conversion part, with the front and rear electrodes distributed on either side of the photoelectric conversion part.…”