Absolute photoluminescence quantum efficiency measurement of light-emitting thin films

Johnson, Aaron R.; Lee, Shu Jen; Klein, Julien; Kanicki, Jerzy

doi:10.1063/1.2778614

Cited by 39 publications

(27 citation statements)

References 6 publications

(6 reference statements)

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“…The absolute quantum cutting efficiency is usually defined as the ratio of emitted photons to absorbed photons, which can be quantitatively measured by an integrating sphere detection system. [10][11][12][13][14] In this Letter, using Tb 3þ -Yb 3þ codoped glass as an example, we demonstrated the quantitative difference between the direct measurement of absolute quantum cutting efficiency and the theoretical estimation. The absolute quantum efficiency of Tb 3þ -Yb 3þ co-doped glass was quantitatively measured and the effect of pump power and Yb 3þ concentration on quantum efficiency was discussed.…”

Section: Introductionmentioning

confidence: 88%

Absolute quantum cutting efficiency of Tb3+-Yb3+ co-doped glass

Duan

Qin

Zhao

et al. 2013

Journal of Applied Physics

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The absolute quantum cutting efficiency of Tb 3þ-Yb 3þ co-doped glass was quantitatively measured by an integrating sphere detection system, which is independent of the excitation power. As the Yb 3þ concentration increases, the near infrared quantum efficiency exhibited an exponential growth with an upper limit of 13.5%, but the visible light efficiency was reduced rapidly. As a result, the total quantum efficiency monotonically decreases rather than increases as theory predicted. In fact, the absolute quantum efficiency was far less than the theoretical value due to the low radiative efficiency of Tb 3þ (<61%) and significant cross-relaxation nonradiative loss between Yb 3þ ions. V

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Section: Introductionmentioning

confidence: 88%

Absolute quantum cutting efficiency of Tb3+-Yb3+ co-doped glass

Duan

Qin

Zhao

et al. 2013

Journal of Applied Physics

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“…This high thickness will add greatly to self-absorption in these materials, especially since their absorption and emission strongly overlap and the concentrations are so high. However, selfabsorption can be corrected by various techniques, 7, 8 the one that is adopted here was taken from the paper by Johnson et al 7 For excitation of the samples two sources were chosen; a 400 nm mode-locked (ML) laser and a 405 nm GaN laser as their wavelengths intersect well with the absorption spectrum of all materials. The 400 nm source is a 532 nm Nd 3+ :YVO 4 pumped Ti:sapphire laser operating at 2 mW of ML 800 nm light, which is subsequently frequency doubled to 400 nm with a LBO crystal.…”

Section: Methodsmentioning

confidence: 99%

“…However, in the solid state it is necessary to integrate over all emission because of waveguiding effects, anisotropy, and self-absorption. 7,8 In the absolute method, anisotropy effects are ignored by using an integration sphere, which is a hollow sphere coated internally with a Lambertian reflector. A typical integration sphere has access for sample loading, excitation source, and detector and will also have baffles to stop direct illumination reaching the detector from any source.…”

Section: Introductionmentioning

confidence: 99%

Application of gauge R&R to the rigorous measurement of quantum yield in fluorescent organic solid state systems

Green

Buckley

2012

Review of Scientific Instruments

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A rigorous measurement of the photoluminescence quantum yield (PLQY) of three luminescent solid state organic material systems is presented. Poly(9,9-dioctylfluorene), perylene (2.97 M in poly(methyl methacrylate)), and perylene red (0.78 M in poly(methyl methacrylate)), were measured using a Ti:sapphire laser yielding 47 ± 3%, 79 ± 3%, and 51 ± 2%, respectively. A GaN diode laser with differing variability was used to measure the PLQY for perylene and perylene red yielding 71 ± 1% and 53 ± 2%, respectively. Variations due to sample preparation (<0.5%), sample degradation (none), and measurement system repeatability (Ti:sapphire ≈2%, GaN ≈1%) have been determined for each material. Variance in laser intensity is found to be the largest source of error which upon propagation to the PLQY, agrees closely with the uncertainty found by means of the rigorous statistics. This suggests reduction of laser intensity variation could allow much greater precision in absolute determinations of PLQY. Some small systematic bias from calibration and self-absorption corrections cannot be ruled out. The current limit of precision for this measurement is ±1% using the more stable GaN laser though this apparently depends on the material and sample fabrication.

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“…integrating sphere and following a method previously described [ 27 ] and was found to be 41%. Photoluminescence spectra and time-resolved photoluminescence measurements of the QDs were obtained using a Jobin Yvon VS140 spectrometer and a silicon single photon avalanche diode (PicoQuant PDM Series) coupled to a time-correlated single photon counting acquisition card (Becker & Hickl SPC-14).…”

Section: Full Paper Full Paper Full Papermentioning

confidence: 99%

Novel Non‐radiative Exciton Harvesting Scheme Yields a 15% Efficiency Improvement in High‐Efficiency III–V Solar Cells

Brossard

Hong

Hung

et al. 2015

Advanced Optical Materials

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high experimental effi ciencies are typically achieved through advanced front-surface optimization of the solar cells, to maximize the collection effi ciency of the highenergy photons absorbed at the surface of the devices. Such optimization techniques prove in many cases too costly for largescale industrial production, and typical mass-produced solar modules only reach conversion effi ciencies of around 20%. [ 2 ] Better use of high-energy photons thus remains an important limiting factor for commercial solar cells.GaAs-based semiconductor solar cells can exhibit very high PCEs, with demonstrated values in excess of 40% [3][4][5] and even reaching 44.7%. [ 6 ] These solar cells are typically triple-junction devices, with a Ge bottom cell absorbing mostly nearinfrared photons between 0.65 and 1.4 eV, a middle InGaAs cell principally absorbing red photons in the 1.4-1.86 eV range, and an InGaP top cell harvesting blue and UV photons above 1.86 eV. A thin window layer of AlInP is typically deposited above the top cell to act as a passivation layer. This layer minimizes non-radiative surface recombination of the excitons created near the surface of the top cell by creating an energy barrier for the minority carriers (see Figure 1 b). While improving the extraction effi ciency in the top cell, the window layer also acts as an absorber for highenergy photons, since AlInP is an indirect semiconductor with a bandgap around 2.2 eV. [ 7 ] The carriers created in the window layer tend to recombine through surface states, which reduces their extraction effi ciency. [ 8 ] This effect lowers the quantum High-effi ciency III-V solar cells typically incorporate an indirect wide-bandgap semiconductor as a passivation layer to limit surface recombination at higher photon energies. The poor extraction effi ciency of the carriers photogenerated in this window layer limits the performance of the devices in the high-energy region of the spectrum. To address this problem, a resonance energy transfer (RET)-mediated luminescent down-shifting (LDS) layer is engineered by depositing an epilayer of colloidal quantum dots (QDs) on an InGaP solar cell. In this confi guration, while the QDs act as a standard LDS layer, excitons are also funneled from the window layer to the QD epilayer using near-fi eld RET. The luminescence energy of the QDs is tuned below the bandgap of the window layer and the emitted light is absorbed in the p-n junction, where carriers are generated and effi ciently extracted. The overall performance of the solar cell is found to be signifi cantly improved after hybridization, with a large 14.6% relative and 2% absolute enhancement of the photon conversion effi ciency.

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Absolute photoluminescence quantum efficiency measurement of light-emitting thin films

Cited by 39 publications

References 6 publications

Absolute quantum cutting efficiency of Tb3+-Yb3+ co-doped glass

Absolute quantum cutting efficiency of Tb3+-Yb3+ co-doped glass

Application of gauge R&R to the rigorous measurement of quantum yield in fluorescent organic solid state systems

Novel Non‐radiative Exciton Harvesting Scheme Yields a 15% Efficiency Improvement in High‐Efficiency III–V Solar Cells

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