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Worren, T.; Ozanyan, Krikor B.; Hunderi, O.; Martelli, F.

doi:10.1103/physrevb.58.3977

Cited by 10 publications

(5 citation statements)

References 42 publications

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“…In multiple quantum wells, above-barrier excitons have been reported. [14][15][16][17][18][19][20] These excitons have two significant features: (i) broadening of the miniband width and (ii) localization of the wave functions in barrier layers. It is well-known that the miniband width depends on the subband order.…”

Section: Resultsmentioning

confidence: 99%

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Dynamics of above-barrier state excitons in multi-stacked quantum dots

Kojima

Tobita

Akahane

2011

Journal of Applied Physics

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We report the relaxation dynamics from above-barrier exciton states to the lowest one in multi-stacked quantum dots (QDs). The photoluminescence decay time increases because of the excitation of higher exciton states, which is attributed to the wider miniband width of above-barrier excitons and the localization of the envelope functions in the barrier layers. The existence of the above barrier minibands makes carrier transport along the growth direction possible and eliminates a difficulty with close QD stacking. These results demonstrate an effective approach to achieve high efficiency QD devices. V

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Section: Resultsmentioning

confidence: 99%

“…Moreover, the localization of the envelope functions of the above-barrierminibands in the barrier layers in strained-quantum wells is one factor that increases the relaxation time to the lower states. 16,17,20 These two factors increase the PL decay time excited at the higher state.…”

Section: Resultsmentioning

confidence: 99%

Dynamics of above-barrier state excitons in multi-stacked quantum dots

Kojima

Tobita

Akahane

2011

Journal of Applied Physics

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“…where the characteristic energy E K is introduced. For the case of InAs well placed in GaAs [12] one obtains that the energy E K varies between 1 and 2.8 eV, depending on the mismatch stress contributions. The phase varies between 0.32N and 0.42N, where N 1 (for the case (i), should be reduced to the interval (0, 2π )).…”

Section: Transfer Matrix Approachmentioning

confidence: 99%

“…Since ρ E is connected directly to the shape of interband optical spectra, see [6b], the step-like dependences over the interval E/ √ E K ε l ≤ 3 permit one to extract UNL parameters which determine the bandstructure of SL. The effect of the above-barrier states on PLE spectra in the wide InGaAs/GaAs structure was measured and calculated within the EMA approach in [12].…”

Section: Miniband Spectrummentioning

confidence: 99%

Electronic states in heterostructures formed by ultranarrow layers

Vasko

Mitin²

2012

J. Phys.: Condens. Matter

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Low-energy electronic states in heterosrtuctures formed by ultranarrow layers (single or several monolayers thickness) are studied theoretically. The host material is described within the effective mass approximation and effect of ultranarrow layers is taken into account within the framework of the transfer matrix approach. Using the current conservation requirement and the inversion symmetry of ultranarrow layer, the transfer matrix is evaluated through two phenomenological parameters. The binding energy of localized state, the reflection (transmission) coefficient for the single ultranarrow layer case, and the energy spectrum of superlattice are determined by these parameters. Spectral dependency of absorption due to photoexcitation of electrons from localized states into minibands of superlattice is determined by the ultranarrow layers characteristics. Such a dependency can be used for verification of the transfer matrix and should modify characteristics of optoelactronic devices with ultranarrow layers. Comparision with experimental data shows that the effective mass approach is not valid for description of ultranarrow layer.

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“…When a strain field is applied to semiconductor materials, stable energy states are created. 20,21) Previously, we suggested that the creation of stable nonlinear polarization is an essential factor for the THz wave emission. 22) Moreover, by showing the availability of these states as the source of the nonlinear polarization, the choice range of materials becomes wider.…”

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confidence: 99%