We have developed a technique to control the polarization dependence of quantum dot (QD)-semiconductor optical amplifiers (SOAs) using vertically stacked self-assembled InAs QDs with moderately thick intermediate layers. By increasing the number of stacking layers, the transverse magnetic polarization component of electroluminescence (EL) from the cleaved edge surface of the SOA has been enhanced dramatically. Broadband and almost isotropic EL with a polarization difference of less than 1.2 dB has been demonstrated in a 1.3 μm optical communication band for nine-layer stacked QDs in the active region of the SOA.

Potentiometric titration in various 1‐1 salt solutions was carried out to study the dissociation behavior of the poly(allylammonium) cation (PAAH+). The titration curves show that proton release from cationic PAAH+ is markedly suppressed by addition of simple salt and depends on the counterion species. From an analysis of the titration curves it is found that the electrostatic free energy change ΔGel upon the proton release is negative in all systems examined, and its absolute value decreases with increasing ionic strength of the medium. Also, at a constant added salt concentration (0.1 mol L−1) ΔGel depends significantly on the counterion species added and increases in the order $\[ {\rm ClO}_{\rm 4}^ - > {\rm NO}_3^ - > {\rm Cl}^ - > {\rm Br}^ - > {\rm SCN}^ - > {\rm I}^ - . \]$ The value of ΔGel correlates well with the electron donor constant En of the counterions. The dissociation behavior of PAAH+ is discussed in terms of electrostatic interaction among the ionized groups on the chain, the charge shielding effect, and the ion‐solvent interaction of the added counterions.

We report the excitonic photoluminescence (PL) characteristics in multiple stacked quantum dots (QDs) fabricated by using a strain compensating technique. The PL characteristics of QD excitons vary according to the spacer layer thickness; with decreasing spacer layer thickness, the PL intensity decreases and the PL decay time becomes longer. Furthermore, the intensity ratio of the transverse-magnetic to transverse-electric modes in the PL emission from the cleaved edge surface increases. As the spacer layer thickness decreases, the degree of overlap of the electron envelope functions owing to tunneling becomes larger, which consequently interconnects the QDs along the growth direction. This interconnection induces a large change in the oscillator strength of the QD excitons and the PL characteristics. Therefore, we concluded that the optical characteristics can be controlled drastically by changing the spacer layer thickness.

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