About the optical properties of oxidized black silicon structures

Pinčík, Emil; Brunner, Róbert; Kobayashi, Hikaru; Mikula, Milan; Kučera, M.; Švec, P.; Gregus, Jan; Vojtek, Pavel; Zábudlá, Zuzana; Imamura, Kentaro; Záhoran, M.

doi:10.1016/j.apsusc.2016.05.035

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“…This eliminates defect states, increases the conversion efficiency and creates a stable layer. Oxidation of porous silicon is one of the most suitable passivation procedures [6]. This procedure also creates Si nanocrystallites covered by SiO x layer [7,8].…”

Section: Introductionmentioning

confidence: 99%

Morphology and FT IR spectra of porous silicon

Kopáni

Mikula

Kosnáč

et al. 2017

Journal of Electrical Engineering

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The morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHy complexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHy and SiFxHy complexes in the layer.K e y w o r d s: porous silicon, nanoparticles, anodic etching, morphology

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Section: Introductionmentioning

confidence: 99%