About the capacitive currents in conducting polymers: the case of polyaniline

Scotto, Juliana; Marmisollé, Waldemar A.; Posadas, D.

doi:10.1007/s10008-019-04291-9

Cited by 15 publications

(16 citation statements)

References 150 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Briefly, the circuit employed to fit the EIS results (Figure 5C) includes the base metallic electrode-inner solution interface capacitance (C Au ), which is connected in parallel to a series connection of the R EP resistance, containing contributions from the electronic resistance of the polymer domains and the resistances ascribed to ionic transport needed for charge compensation, and a constant phase element (CPE), which accounts for the polymer domains-inner solution interface capacitance. [49][50][51][52] Typically, when the electrode surface is rough, the charging/discharging features of the interface cannot be precisely described with a capacitive element, and a CPE is employed. [48] The impedance of the CPE is described by Z CPE = Yo −1 (jω) −n , and the magnitude of the deviation from the capacitive behavior is defined by n. When 0.8 < n < 1, the CPE can be considered as a capacitance.…”

Section: Electrochemical Impedance Spectroscopy Characterizationmentioning

confidence: 99%

PEDOT:Tosylate‐Polyamine‐Based Organic Electrochemical Transistors for High‐Performance Bioelectronics

Fenoy

Bilderling

Knoll

et al. 2021

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

The construction of organic electrochemical transistors (OECTs) using poly(3,4‐ethylenedioxythiophene):tosylate and polyallylamine hydrochloride composites as conducting channel material is presented. The regulation of the polyelectrolyte‐to‐conducting polymer proportion allows one to easily tune both electronic and ionic characteristics of the transistors, yielding devices with low threshold voltages while preserving high transconductance, which is an essential requisite for the effective integration of OECTs with biological systems. Also, the incorporation of the polyelectrolyte enhances the transient response of the OECTs during the ON/OFF switching, probably due to improved ion transport. Furthermore, the integration of pH‐sensitive amino moieties not only improves the pH response of the transistors but also allows for the non‐denaturing electrostatic anchoring of functional enzymes. As a proof‐of‐concept, acetylcholinesterase is electrostatically immobilized by taking advantage of the NH2 moieties, and the OECTs‐based sensors are able to successfully monitor the neurotransmitter acetylcholine in the range 5–125 µm.

show abstract

Section: Electrochemical Impedance Spectroscopy Characterizationmentioning

confidence: 99%

PEDOT:Tosylate‐Polyamine‐Based Organic Electrochemical Transistors for High‐Performance Bioelectronics

Fenoy

Bilderling

Knoll

et al. 2021

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…[17] This hysteresis depends on the scan speeds, pH condition, [37] and on the channel geometry which affects the maximal accessible conductivity of the entire device. Varying the scan speed, the kinetics of PANI electrochemical reactions could be promoted or suppressed [38,39] (inset of Figure 1c) resulting in a larger or smaller hysteresis loop in electrical characteristics (Figure 1c).…”

Section: Resultsmentioning

confidence: 99%

“…Capacitance and Temporal Response Characterizations: I GS versus V SD curves, obtained as described in the previous section, had been used for extracting the polymeric thin film capacitance using the following equation [38,39] :…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

The Role of the Internal Capacitance in Organic Memristive Device for Neuromorphic and Sensing Applications

Battistoni

Cocuzza

Verna

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

for the temporal and spatial integration of incoming signals and for the signal propagation, while synapses are tasked with the variation of the input signal transmission according to learning paradigms such as the activity dependent plasticity (long term and short term plasticity) or the spike-timing dependent plasticity (STDP) algorithm. [2] This structural and functional organization enables the energy efficient and the massively parallel information processing that characterize neuronal networks.Artificial analogs of neurons and synapses can be implemented using traditional electronic elements fabricated with well-established CMOS technology. [3,4] However, these implementations require the use of a rather large number of elements, [5] limiting the effective realization of brain-like systems, especially considering the 3D organization and the possibility of rather long-distance connections. This is the reason why main efforts in the field of artificial neuron networks (one class of neuromorphic systems) were carried out mainly at the software level, limiting the mimicking of several features of brain, for instance, parallel information processing.Recently, a renovated interest in the hardware realization of neuromorphic systems and, in particular, artificial neuron networks [6,7] is due to the progress achieved in the implementation of resistance switching elements, [8][9][10] the so called memristive devices, [11] mimicking synapse properties at the level of single elements, and allowing the realization of neuron analogs. Different groups reported synaptic-like devices using nanoscale magnetic materials developing spintronic devices, [12,13] metal oxides, [14][15][16] or organic materials based on redox reactions [17][18][19] and ion permeation. [20][21][22] The increasing interest in organic materials demonstrating basic forms of neuroplasticity has recently driven the development of different approaches for reducing the operation voltage ranges [23,24] and for increasing the networks density. [25] Short term memory and adaptation functions have been reported in different organic devices [26][27][28][29] who demonstrated the capability of performing paired pulse facilitation or depression (PPF or PPD, respectively), while spatio-temporal neuronal integration has been demonstrated in devices with a multigate configuration [27] or in NbO x volatile memristors. [30] Organic electronics has recently emerged as a promising candidate for the emulation of brain-like functionalities, especially at the device level. Among the proposed technologies, memristive devices have gained an increasing attention due to their non-volatile behavior which makes them suitable for the implementation of artificial neuronal networks. However, most of them have an energy-costly switching mechanism which limits the approach of brain like energy efficiency. Different from them, organic memristive devices (OMDs) have a narrow switching window and implement neuromorphic characteristics at voltages ≤ 1 V. Despite OMDs potentialities in bi...

show abstract

“…1.6 for poly-33″-DDTT undergoing electrochemical oxidation; i.e., poly-33″-DDTT shows a capacitive contribution larger than the faradic one. Such a value of I cap /I far indicates that both processes of anion intercalation (related to the initial faradic process of polymer oxidation under the anodic peaks of Figure 5 ) ( Zotti et al, 1993 ) and double layer formation (related to pseudo-capacitive phenomena within the polymeric slab during redox-charge injection) ( Feldberg, 1984 ; Scotto et al, 2019 ) are taking place within poly-33″-DDTT. The co-existence of these two different types of charging phenomena in poly-33″-DDTT leads us to suppose that the charge-compensating anions occupy different types of polymeric sites according to the analysis of Tanguy et al .…”

Section: Resultsmentioning

confidence: 98%

EQCM Analysis of the Insertion Phenomena in a n-Doped Poly-Alkyl-Terthiophene With Regioregular Pattern of Substitution

2021

View full text Add to dashboard Cite

In the present work, we have undertaken the study of the n-doping process in poly-3,3″-didodecyl-2,2′:5′,2″-terthiophene (poly-33″-DDTT) employing the electrochemical quartz crystal microbalance (EQCM). The present study aims at understanding how cathodic charge in n-doped poly-33″-DDTT is compensated. For this purpose, the in situ analysis of the variations of the polymeric mass has been considered. Poly-33″-DDTT was obtained as a thin coating onto a metallic substrate via the anodic coupling of the corresponding monomer 3,3″-didodecyl-2,2′:5′,2″-terthiophene (33″-DDTT). When subjected to electrochemical n-doping in the polarization interval -2.5 ≤ Eappl ≤ 0 V vs. Ag/Ag+, the films of poly-33″-DDTT varied their mass according to a mechanism of cations insertion during n-doping and cations extraction during polymer neutralization. In fact, the electrochemical doping of polythiophenes requires the accompanying exchange of charged species to maintain the electroneutrality within the structure of the polymer in all states of polarization. At the end of a full electrochemical cycle (consisting of the n-doping and the successive neutralization of poly-33″-DDTT), the polymer retains a fraction of the mass acquired during n-doping, thus manifesting the phenomena of mass trapping. The combined analysis of electrochemical and microgravimetric data suggests that poly-33″-DDTT in the n-doped state undergoes (or electrocatalyzes) uncontrolled electrochemical reactions that are not accompanied by mass variations.

show abstract

About the capacitive currents in conducting polymers: the case of polyaniline

Cited by 15 publications

References 150 publications

PEDOT:Tosylate‐Polyamine‐Based Organic Electrochemical Transistors for High‐Performance Bioelectronics

PEDOT:Tosylate‐Polyamine‐Based Organic Electrochemical Transistors for High‐Performance Bioelectronics

The Role of the Internal Capacitance in Organic Memristive Device for Neuromorphic and Sensing Applications

EQCM Analysis of the Insertion Phenomena in a n-Doped Poly-Alkyl-Terthiophene With Regioregular Pattern of Substitution

Contact Info

Product

Resources

About