Optical band gaps, Eg, up to 0.5 eV higher than in single-crystal samples, are observed for chemically deposited films of CdSe and explained in terms of a quantum-size effect, whereby the electrons are localized in individual crystallites. The increase in Eg depends strongly on deposition temperature, with the greatest increase obtained at the lowest temperature. Annealing at temperatures above the deposition temperature causes a decrease in Eg; this decrease is stronger at higher annealing temperature. Structural studies of the as-deposited layers showed them to be composed of microcrystalline, cubic CdSe, and electron microscopy resolved them into individual crystallites of typically 4080-A diameter, depending on deposition temperature. This is the first example reported of a three-dimensional quantum-size effect in a film. © 1987 The American Physical Society

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The electron transfer to self-assembled molecular monolayers carrying a ferrocene (Fc) center, grafted on a flat Si(100) surface, is a recent subject of experimental investigation. We report here the density functional theory (DFT) ab initio calculation of Fc-silicon hybrid redox potentials. The systems were modeled with a slab of H-terminated Si(100) 1 x 1 and 2 x 1 surfaces: geometries were optimized using the ONIOM method, and solute-solvent interactions were included through the polarizable continuum model (PCM) method. Two new routes for Si functionalization with ethyl- (EtFC) and ethynyl-Fc (EFC) differing only in the unsaturation degree of the anchoring arm have been successfully explored, and the redox potential of the resulting hybrids has been measured by cyclic voltammetry: 0.675 and 0.851 V versus NHE for the EtFC and EFC derivatives, respectively. These values, along with the previously measured potential (0.700 V) for the mono-unsaturated derivative, vinyl-Fc, allow the relation between the unsaturation degree and the adduct redox potential to be studied. The comparison among the measured and computed potentials allows one to discriminate between different adduct isomers for the saturated species and more importantly provides strong indications that the carbon-carbon unsaturation initially present in the molecular arm used for anchoring to the surface is preserved upon addition, in contrast with the commonly accepted reaction mechanism.

A reversible electrochemical behavior is demonstrated on a specially prepared redox-functionalized H-Si(100) surface, obtained via an extra-mild grafting procedure from vinylferrocene. The results of a detailed XPS and electrochemical characterization of the resulting hybrid are reported and discussed to propose it as a reference system for high-quality electroactive monolayers on Si. The investigated ferrocene derivative bears a functional group suitable for a mild route to covalent anchoring on Si, which is based on a photoinduced reaction with visible light under an inert atmosphere. Electrochemical reversibility is shown by sharp symmetric voltammograms on freshly prepared p-Si electrodes. Anodic oxide growth is responsible for the progressive degradation of the electrochemical response. Still, fast electron transfer to the surface redox species is maintained during several thousands cycles.