ABO₃multiferroic perovskite materials for memristive memory and neuromorphic computing

Abstract

Unique electron spin, transfer, polarization and magnetoelectric coupling characteristics of ABO3 multiferroic perovskite make them having promising applications in multifunctional nanoelectronic devices. Reversible ferroelectric polarization, controllable defect concentration and domain...

Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

“…The V o -and H 2 O-related redox reaction is easily triggered. [196][197][198][199][200][201] The V o possibly is compensated or weaken by the electron contributed by the redox reaction or light stimulation. In this case, the unique physical effects such as the NDR and are possibly emerging in the anion-based memristor.…”

Механизмы Магнитоэлектрических Эффектов В Оксидных Мультиферроиках С Прафазой Перовскита

“…В этом отношении перспективными являются мультиферроидные структуры, в которых реализуется несколько типов упорядочений. Магнитоэлектрические компоненты на основе мультиферроиков планируется использовать в качестве буферных элементов логических устройств, принцип работы которых основан на магнитоэлектрической и спин-орбитальной связи (MESO), магнитной памяти произвольного доступа (MRAM), а также элементов нейросетевых технологий [1][2][3][4]. В связи с этим возникает необходимость поиска оптимальных условий для реализации магнитоэлектрических эффектов и интегрирования качеств мультиферроиков с топологическими свойствами материалов.…”

Mechanism and Application of Capacitive-Coupled Memristive Behavior Based on a Biomaterial Developed Memristive Device

“…Big data is the product of this high-tech era, and it has the characteristics of great numbers, high speed, great diversity, low value density, and much authenticity. At the same time, there are higher requirements for current information memory and processing technology. , In order to overcome the challenge of current memory technology, the memristor is considered to be one of the most potential candidates in the field of new concept memory devices. − In 1971, the concept of the memristor was first proposed by Chua . Until 2008, HP Laboratories presented a physical model of memristors with two terminal structures .…”

“…At the same time, there are higher requirements for current information memory and processing technology. , In order to overcome the challenge of current memory technology, the memristor is considered to be one of the most potential candidates in the field of new concept memory devices. − In 1971, the concept of the memristor was first proposed by Chua . Until 2008, HP Laboratories presented a physical model of memristors with two terminal structures . Subsequently, the HP lab proposed the logic operation of resistance switching based on memristor devices in 2010 .…”

“…7 Until 2008, HP Laboratories presented a physical model of memristors with two terminal structures. 6 Subsequently, the HP lab proposed the logic operation of resistance switching based on memristor devices in 2010. 8 From then on, the memristor has been widely studied because of it has the advantages of wide application prospects, simple structure, easy fabrication, fast read−write speed, low power consumption, etc.…”