Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiO<sub>x</sub>/Active Interface

Jeon, Guk-Jin; Yang, Junghoon; Lee, Seung Hee; Jeong, Wooseok; Park, Sang‐Hee Ko

doi:10.1109/led.2021.3054859

Cited by 7 publications

(3 citation statements)

References 21 publications

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“…In 2021, Shiah et al [83] found that impurities on the surface of the back channel also need to be removed before adding a passivation layer. They found that C-related impurities, originating from photoresist and remaining at the back channel during lithography, are the main cause of NBS instability in these devices.…”

Section: Interface Engineeringmentioning

confidence: 99%

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Advances in mobility enhancement of ITZO thin-film transistors: a review

Chen,

Zhang,

Wan

et al. 2023

J. Semicond.

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Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.

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Section: Interface Engineeringmentioning

confidence: 99%

mentioning

confidence: 99%

Advances in mobility enhancement of ITZO thin-film transistors: a review

Chen,

Zhang,

Wan

et al. 2023

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…Lots of work have been reported to improve the stability of metal-oxide semiconductor transistors. 28 Pressure sensors using a-IGZO transistors have also been reported. Geng et al fabricated a pressure sensor containing piezoelectric capacitor using a dual-gate a-IGZO TFT.…”

Section: Introductionmentioning

confidence: 99%