Abnormal Metal–Semiconductor-Like Transition and Exceptional Enhanced Superconducting State in Pressurized Restacked TaS<sub>2</sub>

Dong, Qing; Pan, Jie; Li, Shujia; Li, Chenyi; Lin, Tao; Liu, Bo; Liu, Ran; Li, Quanjun; Huang, Fuqiang; Liu, Bingbing

doi:10.1021/jacs.3c03560

Cited by 7 publications

(4 citation statements)

References 38 publications

(53 reference statements)

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“…Resistance measurements in two separate runs reveal the occurrence of metallization arising from the inherent narrow-gap feature (Figure S2a,c). Moreover, despite the capability to finely tune the band gap of Ta 2 Pd 3 Te 5 and attain superconductivity via chemical doping, we have successfully induced superconductivity through the application of inventive control strategies without involvement of other chemical elements. − When the pressure exceeds 2 GPa, the R ( T ) curves exhibit semiconductor-to-semimetal transition (Figure g), which is similar to the R ( T ) behavior observed in Ta 2 Ni 3 Te 5 . Upon further increasing the pressure, the R 1.7K and R 300K values tend to saturation and are less sensitive to pressure, indicating that Ta 2 Pd 3 Te 5 evolves into the metallic state from the semimetallic state (Figure S2b,d).…”

Section: Results and Discussionmentioning

confidence: 62%

Observation of Emergent Superconductivity in the Topological Insulator Ta₂Pd₃Te₅ via Pressure Manipulation

Yu,

Yan,

Guo

et al. 2024

J. Am. Chem. Soc.

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Topological insulators offer significant potential to revolutionize diverse fields driven by nontrivial manifestations of their topological electronic band structures. However, the realization of superior integration between exotic topological states and superconductivity for practical applications remains a challenge, necessitating a profound understanding of intricate mechanisms. Here, we report experimental observations for a novel superconducting phase in the pressurized second-order topological insulator candidate Ta 2 Pd 3 Te 5 , and the high-pressure phase maintains its original ambient pressure lattice symmetry up to 45 GPa. Our in situ high-pressure synchrotron X-ray diffraction, electrical transport, infrared reflectance, and Raman spectroscopy measurements, in combination with rigorous theoretical calculations, provide compelling evidence for the association between the superconducting behavior and the densified phase. The electronic state change around 20 GPa was found to modify the topology of the Fermi surface directly, which synergistically fosters the emergence of robust superconductivity. In-depth comprehension of the fascinating properties exhibited by the compressed Ta 2 Pd 3 Te 5 phase is achieved, highlighting the extraordinary potential of topological insulators for exploring and investigating high-performance electronic advanced devices under extreme conditions.

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Section: Results and Discussionmentioning

confidence: 62%

Observation of Emergent Superconductivity in the Topological Insulator Ta₂Pd₃Te₅ via Pressure Manipulation

Yu,

Yan,

Guo

et al. 2024

J. Am. Chem. Soc.

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“…The role of electronic correlation and dimensionality engineering in searching for novel superconducting materials has been prominently confirmed in quasi-two-dimensional (2D) cuprates and strontium ruthenates. , Pressure, as an efficient means of regulating lattice parameters, has led to the discovery of novel superconductivity in more 2D van der Waals materials. − In pressurized restacked TaS 2 , a new superconducting SC-II state emerges without structural evolution and gradually replaces the initial SC-I state . Pressure-induced superconducting transitions have also been discovered in 2D-layered selenides like TiSe 2 and HfSe 2 . , In honeycomb lattice FePSe 3 , superconductivity emerges with a starting T c ∼ 2.5 K, concomitant with structural phase transition and spin-crossover .…”

Section: Introductionmentioning

confidence: 99%

Superconductivity in Quasi-One-Dimensional Ferromagnet CrSbSe₃ under High Pressure

Li,

Wang,

Liu

et al. 2024

J. Am. Chem. Soc.

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Nearly a decade has passed since the discovery of superconductivity in CrAs, but until now, the discovered structure types of chromium-based superconductors are still scanty. It is urgent to expand this family to decipher the interplay between magnetism and superconductivity penetratingly. Here, we report the observation of superconductivity in ferromagnet CrSbSe3 with a quasi-one-dimensional structure under high pressure. Under compression, CrSbSe3 undergoes an insulator-to-metal transition and sequential isostructural phase transitions accompanied by volume collapse. Superconductivity emerges at 32.8 GPa concomitant with metallization in CrSbSe3. A maximum superconducting transition temperature T c of 7.7 K is achieved at 57.9 GPa benefiting from both the phonon softening and the enhanced p–d hybridization between Se and Cr in CrSbSe3. The discovery of superconductivity in CrSbSe3 expands the existing chromium-based superconductor family and sheds light on the search for concealed superconductivity in low-dimensional van der Waals materials.

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“…[1,2] This trend of unconventional transitions is echoed in recent studies on transition metal dichalcogenides (TMDs), such as the restacked TaS 2 . [3] It is evident that the anti-Wilson phase transitions in metals and TMDs materials unfold through different underlying mechanisms, in metals, it is often linked to the displacement of core electrons to interstitial spaces within the lattice, whereas in TMDs, the transitions are more commonly associated with shifts between layers.…”

Section: Introductionmentioning

confidence: 99%

Unveiling the pressure-driven metal–semiconductor–metal transition in the doped TiS₂

Chen 陈,

Lv 吕,

Li 李

et al. 2024

Chinese Phys. B

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Conventional theories suggest that materials under pressure are expected to exhibit expanded valence and conduction bands, leading to increased electrical conductivity. Here, we report electrical properties of the doped 1T-TiS2 under high pressure by electrical resistance investigations, synchrotron X-ray diffraction, Raman scattering and theoretical calculations. Up to 70 GPa, an unusual metal-semiconductor-metal transition occurs. Our first-principles calculations suggest that the observed anti-Wilson transition from metal to semiconductor at 17 GPa, is due to the electron localization induced by the intercalated Ti atoms. This electron localization is attributed to the strengthened coupling between the doped Ti atoms and S atoms, and the Anderson localization arising from the disordered intercalation. At pressures exceeding 30.5 GPa, the doped TiS2 undergoes a re-metallization transition initiated by a crystal structure phase transition. We assign the most probably space group as P212121. Our findings suggest that materials probably will eventually undergo the Wilson transition when subjected to sufficient pressure.

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Abnormal Metal–Semiconductor-Like Transition and Exceptional Enhanced Superconducting State in Pressurized Restacked TaS₂

Cited by 7 publications

References 38 publications

Observation of Emergent Superconductivity in the Topological Insulator Ta₂Pd₃Te₅ via Pressure Manipulation

Observation of Emergent Superconductivity in the Topological Insulator Ta₂Pd₃Te₅ via Pressure Manipulation

Superconductivity in Quasi-One-Dimensional Ferromagnet CrSbSe₃ under High Pressure

Unveiling the pressure-driven metal–semiconductor–metal transition in the doped TiS₂

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Abnormal Metal–Semiconductor-Like Transition and Exceptional Enhanced Superconducting State in Pressurized Restacked TaS2

Cited by 7 publications

References 38 publications

Observation of Emergent Superconductivity in the Topological Insulator Ta2Pd3Te5 via Pressure Manipulation

Observation of Emergent Superconductivity in the Topological Insulator Ta2Pd3Te5 via Pressure Manipulation

Superconductivity in Quasi-One-Dimensional Ferromagnet CrSbSe3 under High Pressure

Unveiling the pressure-driven metal–semiconductor–metal transition in the doped TiS2

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Product

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Abnormal Metal–Semiconductor-Like Transition and Exceptional Enhanced Superconducting State in Pressurized Restacked TaS₂

Observation of Emergent Superconductivity in the Topological Insulator Ta₂Pd₃Te₅ via Pressure Manipulation

Observation of Emergent Superconductivity in the Topological Insulator Ta₂Pd₃Te₅ via Pressure Manipulation

Superconductivity in Quasi-One-Dimensional Ferromagnet CrSbSe₃ under High Pressure

Unveiling the pressure-driven metal–semiconductor–metal transition in the doped TiS₂