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Suzuki, Koichi; Mizuhashi, Mamoru; Sakata, H.

doi:10.3131/jvsj.21.158

Cited by 7 publications

(1 citation statement)

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“…Highly conductive films have been prepared by chemical vapor deposition (CVD) (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12) including organometallic CVD (OMCVD) (13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27), sputtering (28)(29)(30)(31), ion plating (32), spraying methods, thermal evaporation (33), and the dip-coating process (34,35). The last method is of interest because it has a great advantage of easily coating large substrates.…”

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Dip‐Coating of Sb‐Doped SnO2 Films by Ethanolamine‐Alkoxide Method

Takahashi

Wada

1990

J. Electrochem. Soc.

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Transparent, highly conducting thin Sb-doped SnO= films have been deposited on glass by a dip-coating method using a solution of tin tetraisopropoxide-triethanolamine-H20-isopropanol. The viscosity of the solution obtained from this system remained constant over 700h. The resistivity of the film depended slightly on film thickness: it was 0.025 ~ -cm below 1000A and decreased to a constant value of 0.005 ~ -cm above 2000A. Average transmittance of visible light was higher than 95% for undoped films and higher than 80% for Sb-doped films. The coated thin films were very uniform and dense, whereas an OMCVD process formed porous films with an island texture. The advantages and disadvantages of the dipcoating process are discussed in comparison with the OMCVD process.SnO2 films are used as transparent electrical conductors and in gas-sensing devices. Highly conductive films have been prepared by chemical vapor deposition (CVD) (1-12) including organometallic CVD (OMCVD) (13-27), sputtering (28-31), ion plating (32), spraying methods, thermal evaporation (33), and the dip-coating process (34,35). The last method is of interest because it has a great advantage of easily coating large substrates. The systems, tin alkoxide-HCl-alcohol (34) and tin carboxylates-alcohol (35), have been proposed for the dip-coating of the SnO2 films. However, the former system is unstable that it is difficult to keep the viscosity of the solution constant for long periods of time and hence to control the film thickness reproducibly. The latter system contains less soluble species such as carboxylates and tends to produce less uniform films with somewhat higher resistivities.In our previous paper on the dip-coating of doped zirconia (36), spinel (37), and titania films (38), we reported that glycols or ethanolamines are especially useful to control the hydrolysis rate of the metal alkoxides, and can yield very suitable solutions for dip-coatings of the oxides. Diethanolamine and related chemicals can be used as inhibitors for the precipitation of oxides on hydrolysis of the alkoxides. Expecting similar effects of ethanolamines on tin alkoxide, we examined the tin alkoxide-ethanolamines-H20-isopropanol system. We report here the results of this study, in which we found that the systein is very useful for the dip-coating o.f uniform, transparent SnO2 films. We have previously investigated OMCVD of SnO2 films using n-butyltin as a source (39), permitting comparisons to be made of the qualities of the films prepared by the dip-coating and those deposited by OMCVD. ExperimentalCommercial Sn(O-i-Pr)4 (2N purity, High Purity Chemicals Company Limited), extra pure grade triethanolamine (TEA), and isopropanol were used without further purification.To an isopropanol solution of the alkoxide (0.1-0.7M) one molar equivalent TEA was added at room temperature, and the mixture was stirred at room temperature for 2h. Then a given amount of deionized water diluted with isopropanol was added drop-wise to the solution and the mixture was stirred at ro...

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confidence: 99%

Dip‐Coating of Sb‐Doped SnO2 Films by Ethanolamine‐Alkoxide Method

Takahashi

Wada

1990

J. Electrochem. Soc.

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Effect of plasma properties on the preparation of tin oxide thin film by means of DC planar magnetron plasma CVD

Fujita

Ueno

Nagano

et al. 1988

Electron Comm Jpn Pt II

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There have been many recent studies on thin‐film deposition in plasma. However, only a few reports have considered the relation between the film deposition and plasma characteristics. In this study, the influence of the plasma characteristics on the thin‐film deposition was investigated via the dc planar magnetron plasma chemical vapor deposition (CVD) technique. Assuming that the characteristics of inert gas plasma measured by probes are the same qualitatively as those of reactive gas plasma, tinoxide thin films which have been used for transparent electrodes, gas sensors, and so forth, are deposited. The decomposition of source materials is accelerated in the highdensity plasma region where the thin films deposited, are composed of highly densified particles and have a crystalline structure. The electrical conductivity of these films is higher than that of films formed in a low‐density plasma region.

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Thin Film Deposition Techniques

Chopra

Das

1983

Thin Film Solar Cells

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Cited by 7 publications

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Dip‐Coating of Sb‐Doped SnO2 Films by Ethanolamine‐Alkoxide Method

Dip‐Coating of Sb‐Doped SnO2 Films by Ethanolamine‐Alkoxide Method

Effect of plasma properties on the preparation of tin oxide thin film by means of DC planar magnetron plasma CVD

Thin Film Deposition Techniques

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