A wideband Noise-Canceling CMOS LNA exploiting a transformer

Blaakmeer, S.C.; Klumperink, Eric A.M.; Leenaerts, D.M.W.; Nauta, Bram

doi:10.1109/rfic.2006.1651110

Cited by 44 publications

(31 citation statements)

References 6 publications

(7 reference statements)

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“…Higher gain with less power consumption is achieved by the preamp designed in this work compared to the design reported in [17], but at the expense of bandwidth (650 MHz vs. 17 GHz). The noise figure attained by the FM-UWB preamp is comparable to other designs which use a CB input stage [17], or employ the similar active balun and noise canceling [21]. The designs reported in [18], [19] achieve lower noise figure, but higher power is consumed.…”

Section: A Rf Preamplifiermentioning

confidence: 68%

A Short Range, Low Data Rate, 7.2 GHz-7.7 GHz FM-UWB Receiver Front-End

Zhao

Dong²,

Veenendaal³

et al. 2009

IEEE J. Solid-State Circuits

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Abstract-A 9 mW FM-UWB receiver front-end for low data rate ( 50 kbps), short range ( 10 m) applications operating in the ultra-wideband (UWB) band centered at 7.45 GHz is described in this paper. A single-ended-to-differential preamplifier with 30 dB voltage gain, a 1 GHz bandwidth FM demodulator, and a combined (preamp/demodulator) receiver front-end were fabricated in 0.25 m SiGe:C BiCMOS and characterized. Measured receiver sensitivity is 85.8 dBm while consuming 9 mW from a 1.8 V supply, and 83 dBm consuming 6 mW at 1.5 V. 15-20 m range line-of-sight in an indoor environment is realized, justifying FM-UWB as a robust radio technology for short range, low data rate applications. Multi-user and interference capabilities are also evaluated.Index Terms-FM-UWB, frequency modulation (FM), IEEE standardization, multi-user capacity, ultra-wideband (UWB) RF receiver front-end, voltage RF preamplifier, wideband FM demodulator.

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Section: A Rf Preamplifiermentioning

confidence: 68%

A Short Range, Low Data Rate, 7.2 GHz-7.7 GHz FM-UWB Receiver Front-End

Zhao

Dong²,

Veenendaal³

et al. 2009

IEEE J. Solid-State Circuits

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“…To reduce the noise generated by M1 of the CS stage, we choose g m,CS of M1to be 4 times larger than g m,CG , then = 4 [4]. Thus the equilibrium noise voltage at the gate of it can be greatly reduced, and so is the total NF of the topology.…”

Section: Proposed Balun Lna Topologymentioning

confidence: 99%

Design of 500MHz Wideband RF Front-end

Zhengqing¹,

2013

Proceedings of 3rd International Conference on Multimedia Technology(ICMT-13)

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This paper presents a design of 500MHz wideband RF front-end for P-band radar based on 0.18 m RF process. The front-end works at the center frequency of 500MHz with 200MHz bandwidth, which transforms single-end signal to differential signal, amplifies it and mixes it with local oscillator signal, outputting an IF signal of 105MHz. It adopts noise-canceling to lower the noise figure. It adopts a common-gate input mode to achieve good input match. The post-simulation results indicate that under a 3.3 V power supply, the S11 is less than -20dB in the work frequency band, the conversion voltage gain is 13.5dB. A NF of 8.6 dB and input 1dB compression point of -8.5dBm are achieved with a total current consumption of 11mA.

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“…CONCLUSIONS Table I shows a comparison of the balun-LNA to three other wideband CMOS active baluns [1][2][3], two passive baluns implemented in CMOS [5] and GaAs [6] and two wideband inductorless single-ended LNAs [4,7]. The proposed balun-LNA is more wideband than the passive integrated baluns [5,6] while showing smaller gain and phase imbalances.…”

Section: Linearitymentioning

confidence: 99%

“…Only a few wideband LNA-balun combinations with sufficient low noise figure for multi-band receivers have been published [1][2][3]. These circuits all exploit the noise canceling topology published in [4,Fig.…”

Section: Introductionmentioning

confidence: 99%

“…Both paths use an equal load resistor (R L ), however, the transconductance (g m ) differs more than a factor of 2, leading to a gain difference (∆g m ·R L ) of at least 6dB. Next to this, the circuits in [1][2][3] all use integrated inductors. As in newer CMOS technologies the area-costs increase, area-consuming integrated inductors become increasingly expensive.…”

Section: Introductionmentioning

confidence: 99%

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An inductorless wideband balun-LNA in 65nm CMOS with balanced output

Blaakmeer

Klumperink

Nauta

et al. 2007

ESSCIRC 2007 - 33rd European Solid-State Circuits Conference

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-An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ±2degrees, 15dB gain, S11<-14dB, IIP3 = 0dBm and IIP2 higher than +20dBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm 2 . The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.

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A wideband Noise-Canceling CMOS LNA exploiting a transformer

Cited by 44 publications

References 6 publications

A Short Range, Low Data Rate, 7.2 GHz-7.7 GHz FM-UWB Receiver Front-End

A Short Range, Low Data Rate, 7.2 GHz-7.7 GHz FM-UWB Receiver Front-End

Design of 500MHz Wideband RF Front-end

An inductorless wideband balun-LNA in 65nm CMOS with balanced output

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