IEEE MTT-S International Microwave Symposium Digest, 2003
DOI: 10.1109/mwsym.2003.1210607
|View full text |Cite
|
Sign up to set email alerts
|

A W-band ultra low noise amplifier MMIC using GaAs pHEMT

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0
1

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 10 publications
(2 citation statements)
references
References 7 publications
0
1
0
1
Order By: Relevance
“…The W‐band MMIC LNA chip showed the excellent noise figure in the W‐band frequency band, as shown in Figure . The developed W‐band MMIC LNA is superior to those of previously GaAs‐based W‐band MMIC LNA .…”
Section: Fabrication and Measurementmentioning
confidence: 88%
“…The W‐band MMIC LNA chip showed the excellent noise figure in the W‐band frequency band, as shown in Figure . The developed W‐band MMIC LNA is superior to those of previously GaAs‐based W‐band MMIC LNA .…”
Section: Fabrication and Measurementmentioning
confidence: 88%
“…SRR은 24 GHz 대역과 79 GHz 대역의 UWB 방식을 사용하였고, LRR은 77 GHz 대역의 FMCW 방식을 사용해 왔으나, 향후 SRR과 LRR을 통합한 하나의 레이더 시스템으로 구 현되어 널리 사용될 전망이다 [2] . 특히, 77 [5] . 하지만 최근 CMOS 공정 기 술의 발전으로 밀리미터파 분야에서도 CMOS 공정 을 이용한 차량용 레이더 송수신기의 개발이 활발히 진행되고 있다 [6] .…”
unclassified