Proceedings of 1995 IEEE MTT-S International Microwave Symposium
DOI: 10.1109/mwsym.1995.405956
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A W-band monolithic 175-mW power amplifier

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Cited by 19 publications
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“…1). Only at 94 GHz and due to a recent report [1], InP HEMT's match the power level of GaAs PHEMT's [2], [3]. The data shown in Fig.…”
Section: Introductionmentioning
confidence: 95%
“…1). Only at 94 GHz and due to a recent report [1], InP HEMT's match the power level of GaAs PHEMT's [2], [3]. The data shown in Fig.…”
Section: Introductionmentioning
confidence: 95%
“…Due to the high losses, when combining several MMIC power amplifier chips in millimeter-wave waveguide modules [1,2], it is desirable to obtain high output power from a single chip. Recently, power amplifiers with common source transistors on GaAs and InP have been published with excellent results [3][4][5][6][7].…”
Section: Introductionmentioning
confidence: 99%
“…Recent advances in the upper frequency limit and output power of three terminal devices has now made it possible to consider them as an alternative to fundamental oscillator sources 15, 6,7]. 50 micron thick substrate, 0.…”
Section: Introductionmentioning
confidence: 99%