A two-stage monolithic W-band power amplifier has been developed, using 0.15 pm AlGaAs/InGaAs/GaAs dual-gate PM-HEMTs. The amplifier demonstrates a small signal gain of 15 dB and a maximum output power of 57 mW with an associated gain of 6 dB at 94 GHz. The circuit consists of two amplifier stages with a total gate width of 0.36 mm in the output stage. The use of coplanar technology and dual-gate HEMTs results in an over-all chip size of only lx 2 mm2.