A VSWR-protected silicon bipolar RF power amplifier with soft-slope power control

Scuderi, A.; Paglia, L. La; Carrara, F.; Palmisano, G.

doi:10.1109/jssc.2005.843634

Cited by 37 publications

(16 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Consequently, the capacitance of an interdigital (IDC) [6] or parallel plate (MIM) [10] capacitor is reduced linearly with the change in permittivity. The bulk ceramic form of BST suffers from thermal sensitivity but its dielectric constant is highest [11].…”

Section: Bst Mim Thick-film Varactor Designmentioning

confidence: 99%

See 1 more Smart Citation

VSWR protection of power amplifiers using BST components

Ferretti

Preis

Heinrich

et al. 2016

2016 German Microwave Conference (GeMiC)

View full text Add to dashboard Cite

A VSWR-protected ISM-band PA was realized using a BST based varactor for detuning of the input matching. Output VSWR levels of 30:1 can be tolerated by applying a varactor bias voltage of up to 20 V. The PA delivers 47.4 dBm output power at a maximum PAE of 49.5%. In case of high VSWR conditions the output power can be limited by detuning the varactor. It is shown that the concept protects the transistor efficiently with very low additional circuit complexity.

show abstract

Section: Bst Mim Thick-film Varactor Designmentioning

confidence: 99%

“…For example, high output voltages can be simply short circuited [3]. Or, if high VSWR ratios are detected, gain or output power can be reduced by either controlling a driver amplifier [4], [5] or by adjusting the gain of the output stage [6].…”

Section: Introductionmentioning

confidence: 99%

VSWR protection of power amplifiers using BST components

Ferretti

Preis

Heinrich

et al. 2016

2016 German Microwave Conference (GeMiC)

View full text Add to dashboard Cite

show abstract

“…In reality, non-idealities such as finite switching speed, switch resistive loss, passive component loss, device breakdown and voltage rail limitations, etc. have kept the PAE of the best Si-based class E PAs below 70% at RF frequencies of 2GHz and above [39][40][41][42][43][44][45][46]. These measured low PAE values strongly suggest that it is extremely challenging, if not impossible, to meet all of the optimal class E switching conditions to achieve ideal I-V waveforms for Si-based monolithic PAs at the high-GHz range.…”

Section: Design Of Monolithic Saturated Pa For Et-based Polar Tranmentioning

confidence: 99%

Design of highly-efficient wideband RF polar transmitters using the Envelope-Tracking technique

Lie

Lopez

2008

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

View full text Add to dashboard Cite

This paper discusses the design issues of highly efficient and monolithic wideband RF polar transmitters, especially the ones that use the EnvelopeTracking (ET) technique. Besides reviewing the stateof-the-art polar transmitters in the literature, three focus topics will be discussed: (1) the system-on-achip (SoC) design considerations of the monolithic polar transmitter using ET; and (2) the design of highly-efficient envelope amplifier capable of achieving the high efficiency, current, bandwidth, accuracy and noise specifications required for wideband signals; and (3) the design of highefficiency monolithic Si-based power amplifiers (PAs) suitable for ET-based RF polar transmitters.

show abstract

“…Entailed with all these advantages, issues such as system optimization, testing time and cost reduction are still pending challenges. Focusing on power amplifiers (PA), efficiency and output power control are strategic performances that require both its monitoring and its optimization [4][5][6].…”

Section: Introductionmentioning

confidence: 99%