A very low power SiGe LNA for UWB application

Park, Y.; Lee, C.-H.; Cressler, John D.; Laskar, J.; Joseph, A.J.

doi:10.1109/mwsym.2005.1516847

Cited by 28 publications

(10 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Reverse isolation is better than 37 dB across the 3.1 to 10.6 GHz band. The [5] 2.9 0.87 15.1 ± 1.4 S 11,max < −9.9 9 (3.0-11) (3.1-10.6) (3.1-10.6) 0.18µm SiGe HBT BiCMOS [2] 3.1 0.72 20.3 − 3.5 S 11,max < −7.2 26 (without buffer) (3.0-10.0) (3.0-10.0) (3.0-10.0) 0.8µm SiGe HBT [6] 3.2 0.17 23.5 − 0.6 S 11,max < −8.5 55 (3.1-10.6) (3.1-10.6) (3.1-10.6) 0.18µm SiGe BiCMOS [7] 3.3 0.88 13 − 3 S 11,max < − 7 measured 50 Ω noise figure is depicted in Fig. 6.…”

Section: Measurement Resultsmentioning

confidence: 99%

Highly Compact 3.1 - 10.6GHz UWB LNA in SiGe HBT Technology

Dederer¹,

Chartier²,

Feger³

et al. 2007

2007 European Conference on Wireless Technologies

View full text Add to dashboard Cite

Abstract-We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 µm SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz. Broadband noise and power matching has been achieved with a cascode topology using resistive shunt feedback in combination with a diode DC level shifter. The measured input IP3 is -14.1 dBm with 10.3 mA total current from a 3.5 V supply. All performance characteristics are comparable to the best reported UWB LNAs but come at a drastically smaller occupied die area of 0.13 mm 2 .

show abstract

Section: Measurement Resultsmentioning

confidence: 99%

Highly Compact 3.1 - 10.6GHz UWB LNA in SiGe HBT Technology

Dederer¹,

Chartier²,

Feger³

et al. 2007

2007 European Conference on Wireless Technologies

View full text Add to dashboard Cite

show abstract

“…As shown, the noise figure varies from 5 dB at 8 GHz to 6 dB at 18 GHz. Compared to other work [2][3][4][5][6][7], the proposed LNA achieves better noise performance with coverage of the entire X-band and Ku-band. And also, active balun was included in our design, the noise figure of proposed LNA is much lower than total noise figure of other wideband LNAs plus external balun.…”

Section: Noise Figure Analysismentioning

confidence: 89%

“…Compared to other wideband LNA topologies, shunt feedback topology is a good candidate for its easy wideband input matching, smaller chip size and insensitivity to process variations with the use of precision resistors [7] [8]. Although the feedback technique would degrade the noise figure for input matching and consume large amount of current, especially in the CMOS to achieve desired gain.…”

Section: Wideband Lna Designmentioning

confidence: 99%

An 8 – 18 GHz wideband SiGe BiCMOS low noise amplifier

Dai

Jaeger

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

View full text Add to dashboard Cite

In this paper, an 8 -18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16-dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-dBm with 17 mA total current consumption from 2.2V supply.Index Terms -Low noise amplifier, resistive feedback, wideband, SiGe, BiCMOS, linearity, X-band, Ku-band, active balun.

show abstract

“…Several proposals were introduced lately for the design of low power, UWB CMOS LNA [5][6][7][8]. Due particularly to its low input impedance, the common-gate LNA exhibits an excellent linearity, selectivity, and impedance matching over the common-base LNAs [9].…”

Section: Design Techniques and Proposed Front-end Receiver A Lowmentioning

confidence: 99%

Time-domain front-end for short time windowing UWB WLAN transform-domain receiver

Zebdi

Massicotte

Fayomi³

2009

2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

View full text Add to dashboard Cite

─ This paper addresses the selectivity problem, for the ultra-wide band (UWB), transform-domain receiver loss of orthogonality. A novel selective time-domain direct-sequence front-end for transform-domain ultra-wideband (UWB) wireless local area network (WLAN) receiver is proposed. The architecture comprises a multi-block, linear, dynamic feedback low-noise amplifier (LNA), quadrature mixer, and baseband filter. The dynamic feedback with inductive output load reduces the LNA to a simple second-order filter, with zero at the origin, while improving the conversion gain (CG) and noise figure (NF). Thus, the CG is further maximized when limiting the two poles within the 5-6GHz frequency band. The mixer, based on a merged quadrature topology, employs single-peak notch network, with benefits to the NF and IIP3 of CG at 5.6GHz. The front-end dissipates a 19.6mW from 1.8 V supply voltage and achieves at 5.6GHz 34.8dB conversion gain, 6.42dB NF, and 1-dB gain desensitization with -8dBm interferer power at 7GHz. Other simulation results are -2.35dBm minimum IIIP3, and -35dBc rejection at the UWB group #3.Index Terms-Transform-domain receiver, front-end, low-noise amplifier, low-power, mixer, RFIC, ultra-wideband (UWB), wireless LAN.

show abstract

A very low power SiGe LNA for UWB application

Cited by 28 publications

References 5 publications

Highly Compact 3.1 - 10.6GHz UWB LNA in SiGe HBT Technology

Highly Compact 3.1 - 10.6GHz UWB LNA in SiGe HBT Technology

An 8 – 18 GHz wideband SiGe BiCMOS low noise amplifier

Time-domain front-end for short time windowing UWB WLAN transform-domain receiver

Contact Info

Product

Resources

About

A very low power SiGe LNA for UWB application

Cited by 28 publications

References 5 publications

Highly Compact 3.1 - 10.6GHz UWB LNA in SiGe HBT Technology

Highly Compact 3.1 - 10.6GHz UWB LNA in SiGe HBT Technology

An 8 &#x2013; 18 GHz wideband SiGe BiCMOS low noise amplifier

Time-domain front-end for short time windowing UWB WLAN transform-domain receiver

Contact Info

Product

Resources

About

An 8 – 18 GHz wideband SiGe BiCMOS low noise amplifier