A vertical-junction field-effect transistor

Mayer, D.C.; Masnari, N.A.; Lomax, R.J.

doi:10.1109/t-ed.1980.19963

Cited by 5 publications

(3 citation statements)

References 5 publications

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“…Vertical transistors [1][2][3] have been gaining interest in the field of organic electronics. [4][5][6][7][8][9] While the main current research driving-force in the field of inorganic transistors is miniaturization, the research focal-point in organic electronics is the substantial enhancement of the electronic currents despite the inherent low carrier mobility in organic semiconductors.…”

mentioning

confidence: 99%

Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

Ben-Sasson

Avnon

Ploshnik

et al. 2009

Applied Physics Letters

106

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We report the design and implementation of a vertical organic field effect transistor which is compatible with standard device fabrication technology and is well described by a self consistent device model. The active semiconductor is a film of C 60 molecules, and the device operation is based on the architecture of the nanopatterned source electrode. The relatively high resolution fabrication process and maintaining the low-cost and simplicity associated with organic electronics, necessitates unconventional fabrication techniques such as soft lithography. Block copolymer self-assembled nanotemplates enable the production of conductive, gridlike metal electrode. The devices reported here exhibit On/Off ratio of 10 4 .

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mentioning

confidence: 99%

Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

Ben-Sasson

Avnon

Ploshnik

et al. 2009

Applied Physics Letters

106

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“…An addition to the device architecture is the vertical organic field-effect transistors (VOFETs) in which charge carrier transport occurs along the vertical source and drain contact and the perforations on the source electrode allow the gate field to be applied along the vertical direction which enhances charge carrier transport by accumulation in those areas. Initial VOFETs type devices were introduced by various research groups across the globe [18][19][20] and later discontinuous source electrode was introduced by Yang et al [21], here the objective was to increase the device current despite low charge carrier mobility and traps due to inherent disorder. The architecture introduced by Yang's groups was later modified using large-scale gate perforations on the source electrode which is well known as Patterned Source-VOFET (PS-VOFET) designed and fabricated by Sasson et al [16,22,23].…”

Section: Introductionmentioning

confidence: 99%

Simulation study of various factors affecting the performance of vertical organic field-effect transistors

Bisht,

Kumar

2023

Eng. Res. Express

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Vertical organic field-effect transistors (VOFETs) can offer a short channel architecture that can further enhance the performance at low operating voltages, which makes it more viable for organic electronics applications. VOFETs can be prepared using low-cost techniques that reduce the high processing costs and can operate at high current densities and relatively high frequencies. To further improve the performance, high current density, and operating frequency, the physics of charge carrier transport should be understood well with the simulation. The main problem with VOFET is the high off-current which is inevitable due to conduction from the source to the drain contact. Many efforts have been made to reduce the off-state current by the addition of an insulating layer on top of the source electrode, which further increases the processing complexity and cost of fabrication. Simulations based on device geometry, contact barriers, and organic semiconductor parameters are carried out to study the charge carrier transport in VOFET. The simulation results show that the most important factor, to enhance the performance is the device geometry or architecture, which requires a specific fill factor, a ratio of the exposed gate dielectric width to the total width of the device with the source electrode. The simulation results also show a different type of working physics of the basic VOFET architecture where the On/Off ratio and subthreshold swing are largely dependent on the initial negative gate field instead of the accumulated charge carriers at positive gate fields. Optimized VOFET architecture is then simulated for variation in contact barrier and semiconductor properties, which show further enhancement in performance.

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“…An inherent disadvantage of several organic semiconductors is their low carrier mobility when compared to crystalline materials, which in turn may require different device architectures to achieve certain performance goals. In this context, several types of vertical field-effect transistors (FETs) [1][2][3][4] have been gaining interest in the field of organic electronics 5,6 where the structure being most relevant for the scope of the current paper is the one reported by Ma et al 6 Like in the static induction transistor case, 1,5 this architecture consisted of all the layers stacked on the top of each other, but the sequence is different such that the source was placed in between the gate oxide and the active semiconductor. 6 Placing a metal layer between the gate/gate oxide and the semiconductor makes it close to impossible to induce any effect in the semiconductor due to the shielding of the gate field by the source electrode.…”

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confidence: 99%

Fast switching characteristics in vertical organic field effect transistors

Greenman

Ben-Sasson

Chen

et al. 2013

Applied Physics Letters

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A vertical-junction field-effect transistor

Cited by 5 publications

References 5 publications

Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

Simulation study of various factors affecting the performance of vertical organic field-effect transistors

Fast switching characteristics in vertical organic field effect transistors

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