A versatile system for Hall effect measurements at high temperature

Gunes, M.; Sato, H.; Pinsard-Gaudart, L.; Bérardan, David; Dragoe, Nita

doi:10.1088/1361-6501/aa7fe1

Cited by 4 publications

(3 citation statements)

References 55 publications

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“…The two heaters were controlled to a temperature of 700 • C. Despite the good thermal conductivity of the brass chuck, a temperature of only 510 • C could be measured on the sample. Another example of such a setup is shown by Gunes et al (2017). This research group utilizes an AlN plate as a sample holder.…”

Section: Motivationmentioning

confidence: 99%

Novel, low-cost device to simultaneously measure the electrical conductivity and the Hall coefficient from room temperature up to 600 °C

Werner

Kita

Gollner³

et al. 2021

J. Sens. Sens. Syst.

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Abstract. A novel measurement device for simultaneous high temperature measurements of the electrical conductivity and the Hall coefficient has been developed. Simulations were used to design a suitable screen-printed planar platinum heating structure that generates temperatures of up to 600 ∘C by Joule heating. Simulations of the temperature distribution have been validated using thermal imaging. With the hardware setup of two permanent magnetic yoke systems with a magnetic flux density of ±760 mT, the electrical conductivity and the charge carrier densities of a silicon wafer and a gold film were measured, as examples of a typical semiconductor with low charge carrier densities but high mobility and a metal representing materials with very high charge carrier densities but moderate mobilities, respectively. Measurements were compared with data from the literature to validate the functionality of the novel, low-cost measurement device.

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Section: Motivationmentioning

confidence: 99%

Novel, low-cost device to simultaneously measure the electrical conductivity and the Hall coefficient from room temperature up to 600 °C

Werner

Kita

Gollner³

et al. 2021

J. Sens. Sens. Syst.

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show abstract

“…Carrier concentration was measured at room temperature using a laboratory made system in AC field [35]. The circuit was closed with Cu-Be pins on the films and measurements were made by applying a DC current with a Keithley 6221 source while oscillating a 1 T magnetic field at 1.4 Hz frequency.…”

Section: Opto-electronic Characterizationmentioning

confidence: 99%

“…The Hall induced AC signal from films deposited on SiO2 was measured with a Zurich Instrument MFLI lock in amplifier. With the instrument we measured samples below 0.1 V/(cm².s) [35] and several reports demonstrated that Hall effect in AC field was a viable route to the characterization of low mobility materials, down to a mobility range 0.001 V/(cm 2 s) [36][37][38][39].…”

Section: Opto-electronic Characterizationmentioning

confidence: 99%

In- and out-plane transport properties of chemical vapor deposited TiO2 anatase films

et al. 2021

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Due to their polymorphism, TiO2 films are quintessential components of state-of-the-art functional materials and devices for various applications from Dynamic Random Access Memory to Solar Water Splitting. However, contrary to other semiconductor/dielectric materials, the relationship between structural/morphological and electrical properties at the nano and micro scales remains unclear. In this context, the morphological characteristics of TiO2 films obtained by Metal-Organic Chemical Vapor Deposition (MOCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD), the latter including nitrogen doping, are investigated and they are linked to their in-plane and out-plane electrical properties. A transition from dense to tree-like columnar morphology is observed for the MOCVD films with increasing deposition temperature. It results in the decrease of grain size and the increase of porosity and disorder, and subsequently it leads to the decrease of lateral carrier mobility. The increase of nitrogen amount in the PECVD films enhances the disorder in their pillar-like columnar

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Morphological, structural, optical, and electrical study of nanostructured thin films: Charge transport mechanism of p-type Co3O4

Miquelot

Despotopoulou

Vahlas

et al. 2020

Materials Chemistry and Physics

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A versatile system for Hall effect measurements at high temperature

Cited by 4 publications

References 55 publications

Novel, low-cost device to simultaneously measure the electrical conductivity and the Hall coefficient from room temperature up to 600 °C

Novel, low-cost device to simultaneously measure the electrical conductivity and the Hall coefficient from room temperature up to 600 °C

In- and out-plane transport properties of chemical vapor deposited TiO2 anatase films

Morphological, structural, optical, and electrical study of nanostructured thin films: Charge transport mechanism of p-type Co3O4

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