A Verilog-A Large-Signal GaN HEMT Model for High Power Amplifier Design

Broadband lumped package modeling for scaling multi-cell GaN HEMT power devices

“…The unit cell consists of 6 fingers each 370um gate width and 0.5um gate length AlGaN/GaN hetero-structures grown on SiC substrate [6]. The die is attached to the package through Au-Sn alloy to the Cu-Mo carrier for better heat flow.…”

“…A modified EEHEMT model [6] which accurately describes of unit cell behavior at quiescent bias and frequencies is used. Pulsed load-pull measurement at 0.9, 2.1 and 3.5GHz are performed at quiescent drain bias of 48Volts and 20mA/mm in 50us pulse with 10% duty cycle to avoid thermal and dispersion effects.…”

“…A highly accurate model up to few harmonics is established for all structures by including other effects like mutual inductances and distributed capacitances and bond wire self-inductances. Finally the model is integrated with GaN unit cell model, which has been validated separately [6], to construct a complete package device.…”

“…Output power of such packaged parts currently exceed few 100 Watts [1] [2]. Although good unit cell models exist for GaN devices [3][4][5][6], modeling such packaged parts poses significant challenge as the cells are deeply embedded in package (Fig.1). Clearly, a well-defined unified model procedure is required to arrive at an optimum model topology that can address the problem across all frequency bands and multiple cells.…”