Broadband lumped package modeling for scaling multi-cell GaN HEMT power devices

Abstract

In this paper lumped approach to establish a package model for multi-cell GaN devices is presented. EM simulated s-parameters are matched to that measured on open and short structures. Initial lumped equivalent R-L-C elements are obtained by studying scaling behavior on standard elements. The model is integrated with GaN unit cell model to construct a package device. The model behavior is validated at 0.9, 2.1 and 3.5GHz for output power levels exceeding 100Watts for 1 to 10 cells at 48Volts.

Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

“…Recent advances on GaN substrates, present better operating conditions than their predecessor technologies, attracting a renewed interest in the development of nitride devices [10,11], on the other hand, despite the fact that the cost of these components remains high and its availability relatively low, academic and scientific interest has increased over time, opening an area with great growth potential, accelerating progress in the development of various electronic and optoelectronic devices today. This paper presents a review of the emerging emergence of new switching technologies based on GaN devices applied to power electronics and renewable energy systems.…”