A Variable-Frequency Current-Dependent Switching Strategy to Improve Tradeoff Between Efficiency and SiC MOSFET Overcurrent Stress in Si/SiC-Hybrid-Switch-Based Inverters

Peng, Zishun; Liu, Zeng; Li, Zongjian; Dai, Yuxing; Zeng, Guo‐Qiang; Shen, Z. John

doi:10.1109/tpel.2020.3026494

Cited by 20 publications

(7 citation statements)

References 33 publications

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“…In [25], the magnitude of turn-off current spike under different turn-off delay time was evaluated, but other circuit parameters were not researched, and the evaluation of turn-off current spike was still not comprehensive. When establishing the loss model of SiC/Si hybrid switch in [26], [27], the loss introduced by the turn-off current spike is considered. However, the power loss caused by the turn-off current spike is approximately calculated by the double pulse experimental results, which is not accurate enough.…”

Section: Introductionmentioning

confidence: 99%

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

Qin

Xie

et al. 2023

IEEE Access

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SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET turns off, the fast slew rate of drain source voltage causes the current spike in Si IGBT due to the effects of parasitic capacitance charging and carrier recombination, which will produce additional turn-off loss, thus affecting the overall efficiency and temperature rise of the converter. Based on the double pulse test circuit of SiC/Si hybrid switch, the mathematical model of the turn-off transient process is established. The effects of the remnant carrier recombination degree of Si IGBT, the turn-off speed of SiC MOSFET and the working conditions on the turn-off current spike of hybrid switch are evaluated. Although adjusting these parameters can reduce the turn-off current spike somewhat, additional losses will be introduced. Therefore, a new method to suppress the turn-off current spike is proposed to balance the power loss and current stress.INDEX TERMS SiC MOSFET/Si IGBT, hybrid switch, current spike, suppression method

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Section: Introductionmentioning

confidence: 99%

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

Qin

Xie

et al. 2023

IEEE Access

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“…Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) with higher critical breakdown fields, lower switching loss, and better thermal conductivity are of interest to replace silicon-insulated gate bipolar transistors (Si IGBTs) in power electronic applications [1][2][3]. This is particularly true for the electric vehicle (EV) industry today, where the range anxiety of driving an EV is the primary motivation for developing high-power-density and high-efficiency power systems [4,5].…”

Section: Introductionmentioning

confidence: 99%

SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance

Yu,

Shi,

Bhattacharya

et al. 2023

Electronics

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A novel 4H-SiC trench metal-oxide-semiconductor field-effect transistor (TMOS) with depletion-mode pMOS (D-pMOS) is proposed and investigated via TCAD simulation. It has an auxiliary gate electrode that controls the electrical connections of P-shield layers under the trench bottom through the D-pMOS. In linear operation, the D-pMOS is turned off and then the potential of the P-shield layers is raised with the auxiliary gate, which shrinks the width of the depletion region of the P-shield/N-drift junction to reduce the resistance of the JFET region. In the saturation operation, the saturation current density of the proposed TMOS is reduced, benefiting from its relatively large cell pitch. The design concept eases the tension between specific on-resistance and short circuit capabilities. Numerical simulation results show that the proposed TMOS exhibits a short circuit withstand time that is 1.92 times longer than that of the conventional TMOS. In addition, a drive tactic is introduced and optimized for the proposed TMOS, which requires only one set of gate drivers. Compared with the conventional TMOS, the switching performance is improved and the switching loss is reduced by 40%.

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“…Hence, it is not economical to replace all the devices in the PV inverter with SiC devices. To overcome this issue, hybrid applications of Si/SiC based devices have been proposed in many studies [6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Comparative Reliability Assessment of Hybrid Si/SiC and Conventional Si Power Module Based PV Inverter Considering Mission Profile of India and Denmark Locations

Kshatri¹,

Dhillon

Mishra

et al. 2022

Energies

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Energy harnessing from renewable energy sources has become more flexible with power electronic technologies. Recent advancements in power electronic technologies achieve converter efficiency higher than 98%. Today, reliable power electronic devices are needed to design a PV-based energy converter (inverter) to reduce the risk of failure and maintenance costs during operation. Wide-bandgap SiC devices are becoming more common in power electronic converters. These devices are designed to reduce switching loss and improve the efficiency of the system. Nevertheless, the cost of SiC devices is a major concern. Hence, to improve the reliability of the PV inverter while considering the economic aspects, this paper develops a highly reliable PV inverter with a hybrid Si/SiC power module that consists of a Si-IGBT with a SiC anti-parallel diode. A test case of a 3 kW PV inverter is considered for reliability analysis. The loading of the PV inverter is done under uncertain environmental conditions by considering the yearly Mission Profile (MP) data related to Ambient Temperature (AT) and Solar Irradiance (SI) at the India and Denmark locations. The effectiveness of the proposed hybrid Si/SiC power module is tested by comparing it with a conventional IGBT power module. The results showcase the marked improvement in PV inverter reliability with the proposed hybrid power module.

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A Variable-Frequency Current-Dependent Switching Strategy to Improve Tradeoff Between Efficiency and SiC MOSFET Overcurrent Stress in Si/SiC-Hybrid-Switch-Based Inverters

Cited by 20 publications

References 33 publications

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch

SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance

Comparative Reliability Assessment of Hybrid Si/SiC and Conventional Si Power Module Based PV Inverter Considering Mission Profile of India and Denmark Locations

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